Archive

Volume 36, Issue 10, Oct 2015

• INVITED REVIEW PAPERS

  Packaging investigation of optoelectronic devices

  Zhike Zhang, Yu Liu, Jianguo Liu, Ninghua Zhu

  J. Semicond.  2015, 36(10): 101001
  doi: 10.1088/1674-4926/36/10/101001

• SEMICONDUCTOR PHYSICS

  Electro-magnetic weak coupling optical polaron and temperature effect in quantum dot

  M. Tiotsop, A. J. Fotue, S. C. Kenfack, N. Issofa, A. V. Wirngo, M. P. Tabue Djemmo, H. Fotsin, L. C. Fai

  J. Semicond.  2015, 36(10): 102001
  doi: 10.1088/1674-4926/36/10/102001

  First-principle study on energy gap of CNT superlattice structure

  Zhonghua Yang, Guili Liu, Yingdong Qu, Rongde Li

  J. Semicond.  2015, 36(10): 102002
  doi: 10.1088/1674-4926/36/10/102002

  Effect of N and Fe codoping on the electronic structure and optical properties of TiO₂ from first-principles study

  Zhuomao Zhu, Baoan Bian, Haifeng Shi

  J. Semicond.  2015, 36(10): 102003
  doi: 10.1088/1674-4926/36/10/102003

  Effects of magnetic field on the polaron in an asymmetrical Gaussian confinement potential quantum well

  Xinjun Ma, Boyu Xiao, Yong Sun, Jinlin Xiao

  J. Semicond.  2015, 36(10): 102004
  doi: 10.1088/1674-4926/36/10/102004

  Coupling effect of quantum wells on band structure

  Jie Chen, Weiyou Zeng

  J. Semicond.  2015, 36(10): 102005
  doi: 10.1088/1674-4926/36/10/102005

  Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics

  Hongqi Jing, Li Zhong, Yuxi Ni, Junjie Zhang, Suping Liu, Xiaoyu Ma

  J. Semicond.  2015, 36(10): 102006
  doi: 10.1088/1674-4926/36/10/102006

• SEMICONDUCTOR MATERIALS

  ZnS thin films deposition by thermal evaporation for photovoltaic applications

  K. Benyahia, A. Benhaya, M. S. Aida

  J. Semicond.  2015, 36(10): 103001
  doi: 10.1088/1674-4926/36/10/103001

  The influence of Fe doping on the surface topography of GaN epitaxial material

  Lei Cui, Haibo Yin, Lijuan Jiang, Quan Wang, Chun Feng, Hongling Xiao, Cuimei Wang, Jiamin Gong, Bo Zhang, Baiquan Li, Xiaoliang Wang, Zhanguo Wang

  J. Semicond.  2015, 36(10): 103002
  doi: 10.1088/1674-4926/36/10/103002

• SEMICONDUCTOR DEVICES

  Ambipolar organic heterojunction transistors based on F₁₆CuPc/CuPc with a MoO₃ buffer layer

  Mingdong Yi, Ning Zhang, Linghai Xie, Wei Huang

  J. Semicond.  2015, 36(10): 104001
  doi: 10.1088/1674-4926/36/10/104001

  Broadband terahertz radiation from a biased two-dimensional electron gas in an AlGaN/GaN heterostructure

  Zhongxin Zheng, Jiandong Sun, Yu Zhou, Zhipeng Zhang, Hua Qin

  J. Semicond.  2015, 36(10): 104002
  doi: 10.1088/1674-4926/36/10/104002

  An improved performance of copper phthalocyanine OFETs with channel and source/drain contact modifications

  Huanqin Dang, Xiaoming Wu, Xiaowei Sun, Runqiu Zou, Ruochuan Zhang, Shougen Yin

  J. Semicond.  2015, 36(10): 104003
  doi: 10.1088/1674-4926/36/10/104003

  Enhanced electroluminescence from a free-standing tensilely strained germanium nanomembrane light-emitting diode

  Jingming Chen, Bin Shu, Jibao Wu, Linxi Fan, Heming Zhang, Huiyong Hu, Rongxi Xuan, Jianjun Song

  J. Semicond.  2015, 36(10): 104004
  doi: 10.1088/1674-4926/36/10/104004

  Enhanced light trapping in periodically truncated cone silicon nanowire structure

  Kai Qiu, Yuhua Zuo, Tianwei Zhou, Zhi Liu, Jun Zheng, Chuanbo Li, Buwen Cheng

  J. Semicond.  2015, 36(10): 104005
  doi: 10.1088/1674-4926/36/10/104005

  Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes

  Hui Wang, Yingxi Niu, Fei Yang, Yong Cai, Zehong Zhang, Zhongming Zeng, Minrui Wang, Chunhong Zeng, Baoshun Zhang

  J. Semicond.  2015, 36(10): 104006
  doi: 10.1088/1674-4926/36/10/104006

  System level simulation of a micro resonant accelerometer with geometric nonlinear beams

  Wenlong Jiao, Weizheng Yuan, Honglong Chang

  J. Semicond.  2015, 36(10): 104007
  doi: 10.1088/1674-4926/36/10/104007

• SEMICONDUCTOR INTEGRATED CIRCUITS

  Multi-mode multi-band power amplifier module with high low-power efficiency

  Xuguang Zhang, Jie Jin

  J. Semicond.  2015, 36(10): 105001
  doi: 10.1088/1674-4926/36/10/105001

  A 16 b 2 GHz digital-to-analog converter in 0.18 μm CMOS with digital calibration technology

  Weidong Yang, Jiandong Zang, Tiehu Li, Pu Luo, Jie Pu, Ruitao Zhang, Chao Chen

  J. Semicond.  2015, 36(10): 105002
  doi: 10.1088/1674-4926/36/10/105002

  A CMOS frontend chip for implantable neural recording with wide voltage supply range

  Jialin Liu, Xu Zhang, Xiaohui Hu, Yatao Guo, Peng Li, Ming Liu, Bin Li, Hongda Chen

  J. Semicond.  2015, 36(10): 105003
  doi: 10.1088/1674-4926/36/10/105003

  A high-precision synchronization circuit for clock distribution

  Chong Lu, Hongzhou Tan, Zhikui Duan, Yi Ding

  J. Semicond.  2015, 36(10): 105004
  doi: 10.1088/1674-4926/36/10/105004

  Demonstration of a fully differential VGA chip with small THD for ECG acquisition system

  Gongli Xiao, Yuliang Qin, Weilin Xu, Baolin Wei, Jihai Duan, Xueming Wei

  J. Semicond.  2015, 36(10): 105005
  doi: 10.1088/1674-4926/36/10/105005

  A single-ended 10-bit 200 kS/s 607 μW SAR ADC with an auto-zeroing offset cancellation technique

  Weiru Gu, Yimin Wu, Fan Ye, Junyan Ren

  J. Semicond.  2015, 36(10): 105006
  doi: 10.1088/1674-4926/36/10/105006

  A self-biased PLL with low power and compact area

  Hailong Jia, Xianmin Chen, Qi Liu, Guangtao Feng

  J. Semicond.  2015, 36(10): 105007
  doi: 10.1088/1674-4926/36/10/105007

  A low power low noise analog front end for portable healthcare system

  Yanchao Wang, Keren Ke, Wenhui Qin, Yajie Qin, Ting Yi, Zhiliang Hong

  J. Semicond.  2015, 36(10): 105008
  doi: 10.1088/1674-4926/36/10/105008

  An inductorless multi-mode RF front end for GNSS receiver in 55 nm CMOS

  Yanbin Luo, Chengyan Ma, Yebing Gan, Min Qian, Tianchun Ye

  J. Semicond.  2015, 36(10): 105009
  doi: 10.1088/1674-4926/36/10/105009

  A broadband 47-67 GHz LNA with 17.3 dB gain in 65-nm CMOS

  Chong Wang, Zhiqun Li, Qin Li, Yang Liu, Zhigong Wang

  J. Semicond.  2015, 36(10): 105010
  doi: 10.1088/1674-4926/36/10/105010

• SEMICONDUCTOR TECHNOLOGY

  A novel compound cleaning solution for benzotriazole removal after copper CMP

  Zhangbing Gu, Yuling Liu, Baohong Gao, Chenwei Wang, Haiwen Deng

  J. Semicond.  2015, 36(10): 106001
  doi: 10.1088/1674-4926/36/10/106001

  A novel cleaner for colloidal silica abrasive removal in post-Cu CMP cleaning

  Haiwen Deng, Baimei Tan, Baohong Gao, Chenwei Wang, Zhangbing Gu, Yan Zhang

  J. Semicond.  2015, 36(10): 106002
  doi: 10.1088/1674-4926/36/10/106002

  A novel kind of TSV slurry with guanidine hydrochloride

  Jiao Hong, Yuling Liu, Baoguo Zhang, Xinhuan Niu, Liying Han

  J. Semicond.  2015, 36(10): 106003
  doi: 10.1088/1674-4926/36/10/106003

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