Packaging investigation of optoelectronic devices
J. Semicond. 2015, 36(10): 101001
doi: 10.1088/1674-4926/36/10/101001
Electro-magnetic weak coupling optical polaron and temperature effect in quantum dot
J. Semicond. 2015, 36(10): 102001
doi: 10.1088/1674-4926/36/10/102001
First-principle study on energy gap of CNT superlattice structure
J. Semicond. 2015, 36(10): 102002
doi: 10.1088/1674-4926/36/10/102002
J. Semicond. 2015, 36(10): 102003
doi: 10.1088/1674-4926/36/10/102003
J. Semicond. 2015, 36(10): 102004
doi: 10.1088/1674-4926/36/10/102004
Coupling effect of quantum wells on band structure
J. Semicond. 2015, 36(10): 102005
doi: 10.1088/1674-4926/36/10/102005
J. Semicond. 2015, 36(10): 102006
doi: 10.1088/1674-4926/36/10/102006
ZnS thin films deposition by thermal evaporation for photovoltaic applications
J. Semicond. 2015, 36(10): 103001
doi: 10.1088/1674-4926/36/10/103001
The influence of Fe doping on the surface topography of GaN epitaxial material
J. Semicond. 2015, 36(10): 103002
doi: 10.1088/1674-4926/36/10/103002
Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer
J. Semicond. 2015, 36(10): 104001
doi: 10.1088/1674-4926/36/10/104001
J. Semicond. 2015, 36(10): 104002
doi: 10.1088/1674-4926/36/10/104002
J. Semicond. 2015, 36(10): 104003
doi: 10.1088/1674-4926/36/10/104003
J. Semicond. 2015, 36(10): 104004
doi: 10.1088/1674-4926/36/10/104004
Enhanced light trapping in periodically truncated cone silicon nanowire structure
J. Semicond. 2015, 36(10): 104005
doi: 10.1088/1674-4926/36/10/104005
J. Semicond. 2015, 36(10): 104006
doi: 10.1088/1674-4926/36/10/104006
System level simulation of a micro resonant accelerometer with geometric nonlinear beams
J. Semicond. 2015, 36(10): 104007
doi: 10.1088/1674-4926/36/10/104007
Multi-mode multi-band power amplifier module with high low-power efficiency
J. Semicond. 2015, 36(10): 105001
doi: 10.1088/1674-4926/36/10/105001
A 16 b 2 GHz digital-to-analog converter in 0.18 μm CMOS with digital calibration technology
J. Semicond. 2015, 36(10): 105002
doi: 10.1088/1674-4926/36/10/105002
A CMOS frontend chip for implantable neural recording with wide voltage supply range
J. Semicond. 2015, 36(10): 105003
doi: 10.1088/1674-4926/36/10/105003
A high-precision synchronization circuit for clock distribution
J. Semicond. 2015, 36(10): 105004
doi: 10.1088/1674-4926/36/10/105004
Demonstration of a fully differential VGA chip with small THD for ECG acquisition system
J. Semicond. 2015, 36(10): 105005
doi: 10.1088/1674-4926/36/10/105005
A single-ended 10-bit 200 kS/s 607 μW SAR ADC with an auto-zeroing offset cancellation technique
J. Semicond. 2015, 36(10): 105006
doi: 10.1088/1674-4926/36/10/105006
A self-biased PLL with low power and compact area
J. Semicond. 2015, 36(10): 105007
doi: 10.1088/1674-4926/36/10/105007
A low power low noise analog front end for portable healthcare system
J. Semicond. 2015, 36(10): 105008
doi: 10.1088/1674-4926/36/10/105008
An inductorless multi-mode RF front end for GNSS receiver in 55 nm CMOS
J. Semicond. 2015, 36(10): 105009
doi: 10.1088/1674-4926/36/10/105009
A broadband 47-67 GHz LNA with 17.3 dB gain in 65-nm CMOS
J. Semicond. 2015, 36(10): 105010
doi: 10.1088/1674-4926/36/10/105010
A novel compound cleaning solution for benzotriazole removal after copper CMP
J. Semicond. 2015, 36(10): 106001
doi: 10.1088/1674-4926/36/10/106001
A novel cleaner for colloidal silica abrasive removal in post-Cu CMP cleaning
J. Semicond. 2015, 36(10): 106002
doi: 10.1088/1674-4926/36/10/106002
A novel kind of TSV slurry with guanidine hydrochloride
J. Semicond. 2015, 36(10): 106003
doi: 10.1088/1674-4926/36/10/106003