Electric and magnetic optical polaron in quantum dot——Part 1: strong coupling
J. Semicond. 2015, 36(7): 072001
doi: 10.1088/1674-4926/36/7/072001
Optimized geometry and electronic structure of three-dimensional β-graphyne
J. Semicond. 2015, 36(7): 072002
doi: 10.1088/1674-4926/36/7/072002
Scattering mechanism of hole in (001), (101), (111) biaxially-strained Si and Si1-xGex materials
J. Semicond. 2015, 36(7): 072003
doi: 10.1088/1674-4926/36/7/072003
Growth-temperature-dependent optical and acetone detection properties of ZnO thin films
J. Semicond. 2015, 36(7): 073001
doi: 10.1088/1674-4926/36/7/073001
Magnetic polarization of a Mn-doped semiconductor nanostructure controlled by an external bias
J. Semicond. 2015, 36(7): 073002
doi: 10.1088/1674-4926/36/7/073002
J. Semicond. 2015, 36(7): 073003
doi: 10.1088/1674-4926/36/7/073003
Temperature sensor based on composite film of vanadium complex (VO2(3-fl)) and CNT
J. Semicond. 2015, 36(7): 073004
doi: 10.1088/1674-4926/36/7/073004
Effect of Ge-GeO2 co-doping on non-ohmic behaviour of TiO2-V2O5-Y2O3 varistor ceramics
J. Semicond. 2015, 36(7): 073005
doi: 10.1088/1674-4926/36/7/073005
Chemical and electrical properties of (NH4)2S passivated GaSb surface
J. Semicond. 2015, 36(7): 073006
doi: 10.1088/1674-4926/36/7/073006
Dopingless impact ionization MOS (DL-IMOS)——a remedy for complex process flow
J. Semicond. 2015, 36(7): 074001
doi: 10.1088/1674-4926/36/7/074001
J. Semicond. 2015, 36(7): 074002
doi: 10.1088/1674-4926/36/7/074002
J. Semicond. 2015, 36(7): 074003
doi: 10.1088/1674-4926/36/7/074003
A new method for calculation of majority carrier compensation in photovoltaics
J. Semicond. 2015, 36(7): 074004
doi: 10.1088/1674-4926/36/7/074004
J. Semicond. 2015, 36(7): 074005
doi: 10.1088/1674-4926/36/7/074005
Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications
J. Semicond. 2015, 36(7): 074006
doi: 10.1088/1674-4926/36/7/074006
Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT
J. Semicond. 2015, 36(7): 074007
doi: 10.1088/1674-4926/36/7/074007
High performance AlGaN/GaN HEMTs with AlN/SiNx passivation
J. Semicond. 2015, 36(7): 074008
doi: 10.1088/1674-4926/36/7/074008
Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching
J. Semicond. 2015, 36(7): 074009
doi: 10.1088/1674-4926/36/7/074009
Frequency stability of an RF oscillator with an MEMS-based encapsulated resonator
J. Semicond. 2015, 36(7): 074010
doi: 10.1088/1674-4926/36/7/074010
A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductor
J. Semicond. 2015, 36(7): 075001
doi: 10.1088/1674-4926/36/7/075001
Novel pre-equalization transimpedance amplifier for 10 Gb/s optical interconnects
J. Semicond. 2015, 36(7): 075002
doi: 10.1088/1674-4926/36/7/075002
J. Semicond. 2015, 36(7): 075003
doi: 10.1088/1674-4926/36/7/075003
A CMOS analog front-end chip for amperometric electrochemical sensors
J. Semicond. 2015, 36(7): 075004
doi: 10.1088/1674-4926/36/7/075004
Design of a reliable PUF circuit based on R-2R ladder digital-to-analog convertor
J. Semicond. 2015, 36(7): 075005
doi: 10.1088/1674-4926/36/7/075005
A current-mode DAC unit circuit with smooth transition
J. Semicond. 2015, 36(7): 075006
doi: 10.1088/1674-4926/36/7/075006
Design and test of a capacitance detection circuit based on a transimpedance amplifier
J. Semicond. 2015, 36(7): 075007
doi: 10.1088/1674-4926/36/7/075007
Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer
J. Semicond. 2015, 36(7): 076001
doi: 10.1088/1674-4926/36/7/076001
J. Semicond. 2015, 36(7): 076002
doi: 10.1088/1674-4926/36/7/076002