Archive

Volume 36, Issue 7, Jul 2015

• SEMICONDUCTOR PHYSICS

  Electric and magnetic optical polaron in quantum dot——Part 1: strong coupling

  A. J. Fotue, N. Issofa, M. Tiotsop, S. C. Kenfack, M. P. Tabue Djemmo, H. Fotsin, L. C. Fai

  J. Semicond.  2015, 36(7): 072001
  doi: 10.1088/1674-4926/36/7/072001

  Optimized geometry and electronic structure of three-dimensional β-graphyne

  Yang Pei, Haibin Wu, Jingmin Liu

  J. Semicond.  2015, 36(7): 072002
  doi: 10.1088/1674-4926/36/7/072002

  Scattering mechanism of hole in (001), (101), (111) biaxially-strained Si and Si_1-xGe_x materials

  Lixia Zhao, Chao Yang, He Zhu, Jianjun Song

  J. Semicond.  2015, 36(7): 072003
  doi: 10.1088/1674-4926/36/7/072003

• SEMICONDUCTOR MATERIALS

  Growth-temperature-dependent optical and acetone detection properties of ZnO thin films

  P. S. Shewale, Y. S. Yu

  J. Semicond.  2015, 36(7): 073001
  doi: 10.1088/1674-4926/36/7/073001

  Magnetic polarization of a Mn-doped semiconductor nanostructure controlled by an external bias

  P. Paradeo

  J. Semicond.  2015, 36(7): 073002
  doi: 10.1088/1674-4926/36/7/073002

  Photocatalytic degradation of RhB and TNT and photocatalytic water splitting with CZTS microparticles

  S. S. Shinde

  J. Semicond.  2015, 36(7): 073003
  doi: 10.1088/1674-4926/36/7/073003

  Temperature sensor based on composite film of vanadium complex (VO₂(3-fl)) and CNT

  Kh. S. Karimov, M. Mahroof-Tahir, M. Saleem, M. Tariq Saeed Chani, A. Khan Niaz

  J. Semicond.  2015, 36(7): 073004
  doi: 10.1088/1674-4926/36/7/073004

  Effect of Ge-GeO₂ co-doping on non-ohmic behaviour of TiO₂-V₂O₅-Y₂O₃ varistor ceramics

  Kunyong Kang, Guoyou Gan, Jikang Yan, Jianhong Yi, Jiamin Zhang, Jinghong Du, Wenchao Zhao, Xuequan Rong

  J. Semicond.  2015, 36(7): 073005
  doi: 10.1088/1674-4926/36/7/073005

  Chemical and electrical properties of (NH₄)₂S passivated GaSb surface

  Dongyan Tao, Yu Cheng, Jingming Liu, Jie Su, Tong Liu, Fengyun Yang, Fenghua Wang, Kewei Cao, Zhiyuan Dong, Youwen Zhao

  J. Semicond.  2015, 36(7): 073006
  doi: 10.1088/1674-4926/36/7/073006

• SEMICONDUCTOR DEVICES

  Dopingless impact ionization MOS (DL-IMOS)——a remedy for complex process flow

  Sangeeta Singh, P. N. Kondekar

  J. Semicond.  2015, 36(7): 074001
  doi: 10.1088/1674-4926/36/7/074001

  Numerical simulation of the effect of the free carrier motilities on light-soaked a-Si:H p-i-n solar cell

  L. Ayat, A. F. Bouhdjar, AF. Meftah, N. Sengouga

  J. Semicond.  2015, 36(7): 074002
  doi: 10.1088/1674-4926/36/7/074002

  Hydrolysis preparation of the compact TiO₂ layer using metastable TiCl₄ isopropanol/water solution for inorganic-organic hybrid heterojunction perovskite solar cells

  Xiaoyan Dai, Chengwu Shi, Yanru Zhang, Ni Wu

  J. Semicond.  2015, 36(7): 074003
  doi: 10.1088/1674-4926/36/7/074003

  A new method for calculation of majority carrier compensation in photovoltaics

  Rumin Zhang, Peng Liu, Dijun Liu, Guobin Su

  J. Semicond.  2015, 36(7): 074004
  doi: 10.1088/1674-4926/36/7/074004

  Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress

  Lei Shi, Shiwei Feng, Kun Liu, Yamin Zhang

  J. Semicond.  2015, 36(7): 074005
  doi: 10.1088/1674-4926/36/7/074005

  Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications

  Pongthavornkamol Tiwat, Lei Pang, Xinhua Wang, Sen Huang, Guoguo Liu, Tingting Yuan, Xinyu Liu

  J. Semicond.  2015, 36(7): 074006
  doi: 10.1088/1674-4926/36/7/074006

  Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT

  Yong Lei, Hai Lu

  J. Semicond.  2015, 36(7): 074007
  doi: 10.1088/1674-4926/36/7/074007

  High performance AlGaN/GaN HEMTs with AlN/SiN_x passivation

  Xin Tan, Yuanjie Lü, Guodong Gu, Li Wang, Shaobo Dun, Xubo Song, Hongyu Guo, Jiayun Yin, Shujun Cai, Zhihong Feng

  J. Semicond.  2015, 36(7): 074008
  doi: 10.1088/1674-4926/36/7/074008

  Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching

  Xiang Li, Degang Zhao, Desheng Jiang, Ping Chen, Zongshun Liu, Jianjun Zhu, Ming Shi, Danmei Zhao, Wei Liu, Shuming Zhang, Hui Yang

  J. Semicond.  2015, 36(7): 074009
  doi: 10.1088/1674-4926/36/7/074009

  Frequency stability of an RF oscillator with an MEMS-based encapsulated resonator

  Bohua Peng, Wei Luo, Jicong Zhao, Quan Yuan, Jinling Yang, Fuhua Yang

  J. Semicond.  2015, 36(7): 074010
  doi: 10.1088/1674-4926/36/7/074010

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductor

  Shuo Wang, Xinnian Zheng, Hao Yang, Haiying Zhang

  J. Semicond.  2015, 36(7): 075001
  doi: 10.1088/1674-4926/36/7/075001

  Novel pre-equalization transimpedance amplifier for 10 Gb/s optical interconnects

  Qiwei Song, Luhong Mao, Sheng Xie, Yuzhuo Kang

  J. Semicond.  2015, 36(7): 075002
  doi: 10.1088/1674-4926/36/7/075002

  LTE turbo decoder design

  Le Yang, Tianchun Ye, Bin Wu, Ruiqi Zhang

  J. Semicond.  2015, 36(7): 075003
  doi: 10.1088/1674-4926/36/7/075003

  A CMOS analog front-end chip for amperometric electrochemical sensors

  Zhichao Li, Yuntao Liu, Min Chen, Jingbo Xiao, Jie Chen

  J. Semicond.  2015, 36(7): 075004
  doi: 10.1088/1674-4926/36/7/075004

  Design of a reliable PUF circuit based on R-2R ladder digital-to-analog convertor

  Pengjun Wang, Xuelong Zhang, Yuejun Zhang, Jianrui Li

  J. Semicond.  2015, 36(7): 075005
  doi: 10.1088/1674-4926/36/7/075005

  A current-mode DAC unit circuit with smooth transition

  Yidie Ye, Yinshui Xia

  J. Semicond.  2015, 36(7): 075006
  doi: 10.1088/1674-4926/36/7/075006

  Design and test of a capacitance detection circuit based on a transimpedance amplifier

  Linfeng Mu, Wendong Zhang, Changde He, Rui Zhang, Jinlong Song, Chenyang Xue

  J. Semicond.  2015, 36(7): 075007
  doi: 10.1088/1674-4926/36/7/075007

• SEMICONDUCTOR TECHNOLOGY

  Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer

  Xiaodong Luan, Yuling Liu, Xinhuan Niu, Juan Wang

  J. Semicond.  2015, 36(7): 076001
  doi: 10.1088/1674-4926/36/7/076001

  Effect of FA/O complexing agents and H₂O₂ on chemical mechanical polishing of ruthenium in weakly alkaline slurry

  Bo Duan, Weijing An, Jianwei Zhou, Shuai Wang

  J. Semicond.  2015, 36(7): 076002
  doi: 10.1088/1674-4926/36/7/076002

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