Archive

Volume 37, Issue 12, Dec 2016

• SEMICONDUCTOR PHYSICS

  Electrical properties of Cu₄ZnSnS₂/ZnS heterojunction prepared by ultrasonic spray pyrolysis

  S. Guitouni, M. Khammar, M. Messaoudi, N. Attaf, M.S. Aida

  J. Semicond.  2016, 37(12): 122001
  doi: 10.1088/1674-4926/37/12/122001

  Effect of ultrasound on reverse leakage current of silicon Schottky barrier structure

  O.Ya Olikh, K.V. Voitenko, R.M. Burbelo, JaM. Olikh

  J. Semicond.  2016, 37(12): 122002
  doi: 10.1088/1674-4926/37/12/122002

  The slabs for the rutile TiO₂(110) surface

  Xuechao Li, Jianhao Shi, Rundong Wan

  J. Semicond.  2016, 37(12): 122003
  doi: 10.1088/1674-4926/37/12/122003

• SEMICONDUCTOR MATERIALS

  Influence of thickness on strain state and surface morphology of AlN grown by HVPE

  Maosong Sun, Jicai Zhang, Jun Huang, Xuewei Li, Linjun Wang, Xuehua Liu, Jianfeng Wang, Ke Xu

  J. Semicond.  2016, 37(12): 123001
  doi: 10.1088/1674-4926/37/12/123001

  Nanoplasmonic-gold-cylinder-array-enhanced terahertz source

  Zhiguang Ao, Jinhai Sun, He Cai, Guofeng Song, Jiakun Song, Yuzhi Song, Yun Xu

  J. Semicond.  2016, 37(12): 123002
  doi: 10.1088/1674-4926/37/12/123002

• SEMICONDUCTOR DEVICES

  Research progress of Ⅲ-Ⅴ laser bonding to Si

  Bo Ren, Yan Hou, Yanan Liang

  J. Semicond.  2016, 37(12): 124001
  doi: 10.1088/1674-4926/37/12/124001

  Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

  Yang Liu, Changchun Chai, Chunlei Shi, Qingyang Fan, Yuqian Liu

  J. Semicond.  2016, 37(12): 124002
  doi: 10.1088/1674-4926/37/12/124002

  Total ionizing dose radiation effects on NMOS parasitic transistors in advanced bulk CMOS technology devices

  Baoping He, Zujun Wang, Jiangkun Sheng, Shaoyan Huang

  J. Semicond.  2016, 37(12): 124003
  doi: 10.1088/1674-4926/37/12/124003

  Analysis of mode characteristics for microcircular resonators confined by different metallic materials

  Qifeng Yao, Yongzhen Huang, Yuede Yang, Jinlong Xiao

  J. Semicond.  2016, 37(12): 124004
  doi: 10.1088/1674-4926/37/12/124004

  C-band fundamental/first-order mode converter based on multimode interference coupler on InP substrate

  Limeng Zhang, Dan Lu, Zhaosong Li, Biwei Pan, Lingjuan Zhao

  J. Semicond.  2016, 37(12): 124005
  doi: 10.1088/1674-4926/37/12/124005

• SEMICONDUCTOR INTEGRATED CIRCUITS

  Efficient SRAM yield optimization with mixture surrogate modeling

  Zhongjian Jiang, Zuochang Ye, Yan Wang

  J. Semicond.  2016, 37(12): 125001
  doi: 10.1088/1674-4926/37/12/125001

  Design of replica bit line control circuit to optimize power for SRAM

  Pengjun Wang, Keji Zhou, Huihong Zhang, Daohui Gong

  J. Semicond.  2016, 37(12): 125002
  doi: 10.1088/1674-4926/37/12/125002

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