Electrical properties of Cu4ZnSnS2/ZnS heterojunction prepared by ultrasonic spray pyrolysis
J. Semicond. 2016, 37(12): 122001
doi: 10.1088/1674-4926/37/12/122001
Effect of ultrasound on reverse leakage current of silicon Schottky barrier structure
J. Semicond. 2016, 37(12): 122002
doi: 10.1088/1674-4926/37/12/122002
The slabs for the rutile TiO2(110) surface
J. Semicond. 2016, 37(12): 122003
doi: 10.1088/1674-4926/37/12/122003
Influence of thickness on strain state and surface morphology of AlN grown by HVPE
J. Semicond. 2016, 37(12): 123001
doi: 10.1088/1674-4926/37/12/123001
Nanoplasmonic-gold-cylinder-array-enhanced terahertz source
J. Semicond. 2016, 37(12): 123002
doi: 10.1088/1674-4926/37/12/123002
Research progress of Ⅲ-Ⅴ laser bonding to Si
J. Semicond. 2016, 37(12): 124001
doi: 10.1088/1674-4926/37/12/124001
Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor
J. Semicond. 2016, 37(12): 124002
doi: 10.1088/1674-4926/37/12/124002
J. Semicond. 2016, 37(12): 124003
doi: 10.1088/1674-4926/37/12/124003
J. Semicond. 2016, 37(12): 124004
doi: 10.1088/1674-4926/37/12/124004
J. Semicond. 2016, 37(12): 124005
doi: 10.1088/1674-4926/37/12/124005
Efficient SRAM yield optimization with mixture surrogate modeling
J. Semicond. 2016, 37(12): 125001
doi: 10.1088/1674-4926/37/12/125001
Design of replica bit line control circuit to optimize power for SRAM
J. Semicond. 2016, 37(12): 125002
doi: 10.1088/1674-4926/37/12/125002