J. Semicond. 2019, 40(1): 010201
doi: 10.1088/1674-4926/40/1/010201
J. Semicond. 2019, 40(1): 010202
doi: 10.1088/1674-4926/40/1/010202
Detecting forbidden Raman modes
J. Semicond. 2019, 40(1): 010203
doi: 10.1088/1674-4926/40/1/010203
Gallium oxide: promise to provide more efficient life
J. Semicond. 2019, 40(1): 010301
doi: 10.1088/1674-4926/40/1/010301
Bulk gallium oxide single crystal growth
J. Semicond. 2019, 40(1): 010401
doi: 10.1088/1674-4926/40/1/010401
J. Semicond. 2019, 40(1): 010101
doi: 10.1088/1674-4926/40/1/010101
Growth and fundamentals of bulk β-Ga2O3 single crystals
J. Semicond. 2019, 40(1): 011801
doi: 10.1088/1674-4926/40/1/011801
Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material
J. Semicond. 2019, 40(1): 011802
doi: 10.1088/1674-4926/40/1/011802
A review of the most recent progresses of state-of-art gallium oxide power devices
J. Semicond. 2019, 40(1): 011803
doi: 10.1088/1674-4926/40/1/011803
J. Semicond. 2019, 40(1): 011804
doi: 10.1088/1674-4926/40/1/011804
Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga2O3
J. Semicond. 2019, 40(1): 011805
doi: 10.1088/1674-4926/40/1/011805
J. Semicond. 2019, 40(1): 012801
doi: 10.1088/1674-4926/40/1/012801
β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy
J. Semicond. 2019, 40(1): 012802
doi: 10.1088/1674-4926/40/1/012802
Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V
J. Semicond. 2019, 40(1): 012803
doi: 10.1088/1674-4926/40/1/012803
Heteroepitaxial growth of thick α-Ga2O3 film on sapphire (0001) by MIST-CVD technique
J. Semicond. 2019, 40(1): 012804
doi: 10.1088/1674-4926/40/1/012804
Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β-Ga2O3
J. Semicond. 2019, 40(1): 012805
doi: 10.1088/1674-4926/40/1/012805
J. Semicond. 2019, 40(1): 012806
doi: 10.1088/1674-4926/40/1/012806