Archive

Volume 40, Issue 1, Jan 2019

• Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

• RESEARCH HIGHLIGHTS

  Si photocathode

  Zhijie Wang

  J. Semicond.  2019, 40(1): 010201
  doi: 10.1088/1674-4926/40/1/010201

  Porous Ni–O/Ni/Si photoanode

  Dawei Cao

  J. Semicond.  2019, 40(1): 010202
  doi: 10.1088/1674-4926/40/1/010202

  Detecting forbidden Raman modes

  Ping-Heng Tan

  J. Semicond.  2019, 40(1): 010203
  doi: 10.1088/1674-4926/40/1/010203

• COMMENTS AND OPINIONS

  Gallium oxide: promise to provide more efficient life

  Yue Hao

  J. Semicond.  2019, 40(1): 010301
  doi: 10.1088/1674-4926/40/1/010301

• NEWS AND VIEWS

  Bulk gallium oxide single crystal growth

  Xutang Tao

  J. Semicond.  2019, 40(1): 010401
  doi: 10.1088/1674-4926/40/1/010401

• EDITORIAL

  Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

  Xutang Tao, Jiandong Ye, Shibing Long, Zhitai Jia

  J. Semicond.  2019, 40(1): 010101
  doi: 10.1088/1674-4926/40/1/010101

• REVIEWS

  Growth and fundamentals of bulk β-Ga₂O₃ single crystals

  H. F. Mohamed, Changtai Xia, Qinglin Sai, Huiyuan Cui, Mingyan Pan, Hongji Qi

  J. Semicond.  2019, 40(1): 011801
  doi: 10.1088/1674-4926/40/1/011801

  Progress of power field effect transistor based on ultra-wide bandgap Ga₂O₃ semiconductor material

  Hang Dong, Huiwen Xue, Qiming He, Yuan Qin, Guangzhong Jian, Shibing Long, Ming Liu

  J. Semicond.  2019, 40(1): 011802
  doi: 10.1088/1674-4926/40/1/011802

  A review of the most recent progresses of state-of-art gallium oxide power devices

  Hong Zhou, Jincheng Zhang, Chunfu Zhang, Qian Feng, Shenglei Zhao, Peijun Ma, Yue Hao

  J. Semicond.  2019, 40(1): 011803
  doi: 10.1088/1674-4926/40/1/011803

  A review of β-Ga₂O₃ single crystal defects, their effects on device performance and their formation mechanism

  Bo Fu, Zhitai Jia, Wenxiang Mu, Yanru Yin, Jian Zhang, Xutang Tao

  J. Semicond.  2019, 40(1): 011804
  doi: 10.1088/1674-4926/40/1/011804

  Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga₂O₃

  Xiangqian Xiu, Liying Zhang, Yuewen Li, Zening Xiong, Rong Zhang, Youdou Zheng

  J. Semicond.  2019, 40(1): 011805
  doi: 10.1088/1674-4926/40/1/011805

• ARTICLES

  Temperature-dependent electrical properties of β-Ga₂O₃ Schottky barrier diodes on highly doped single-crystal substrates

  Tsung-Han Yang, Houqiang Fu, Hong Chen, Xuanqi Huang, Jossue Montes, Izak Baranowski, Kai Fu, Yuji Zhao

  J. Semicond.  2019, 40(1): 012801
  doi: 10.1088/1674-4926/40/1/012801

  β-Ga₂O₃ thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy

  Jiaqi Wei, Kumsong Kim, Fang Liu, Ping Wang, Xiantong Zheng, Zhaoying Chen, Ding Wang, Ali Imran, Xin Rong, Xuelin Yang, Fujun Xu, Jing Yang, Bo Shen, Xinqiang Wang

  J. Semicond.  2019, 40(1): 012802
  doi: 10.1088/1674-4926/40/1/012802

  Source-field-plated Ga₂O₃ MOSFET with a breakdown voltage of 550 V

  Yuanjie Lü, Xubo Song, Zezhao He, Yuangang Wang, Xin Tan, Shixiong Liang, Cui Wei, Xingye Zhou, Zhihong Feng

  J. Semicond.  2019, 40(1): 012803
  doi: 10.1088/1674-4926/40/1/012803

  Heteroepitaxial growth of thick α-Ga₂O₃ film on sapphire (0001) by MIST-CVD technique

  Tongchuan Ma, Xuanhu Chen, Fangfang Ren, Shunming Zhu, Shulin Gu, Rong Zhang, Youdou Zheng, Jiandong Ye

  J. Semicond.  2019, 40(1): 012804
  doi: 10.1088/1674-4926/40/1/012804

  Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β-Ga₂O₃

  Jianjun Shi, Xiaochuan Xia, Qasim Abbas, Jun Liu, Heqiu Zhang, Yang Liu, Hongwei Liang

  J. Semicond.  2019, 40(1): 012805
  doi: 10.1088/1674-4926/40/1/012805

  Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH₃ plasma pretreatment

  Hui Hao, Xiao Chen, Zhengcheng Li, Yang Shen, Hu Wang, Yanfei Zhao, Rong Huang, Tong Liu, Jian Liang, Yuxin An, Qing Peng, Sunan Ding

  J. Semicond.  2019, 40(1): 012806
  doi: 10.1088/1674-4926/40/1/012806

Journal of Semiconductors © 2017 All Rights Reserved