Journal of Semiconductors

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Volume 6, Issue 6, Jun 1985

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CONTENTS

强磁场下n型InSb杂质带及其电导的理论

黄敏, 韩汝琦, 甘子钊

Chin. J. Semicond. 1985, 6(6): 563-575

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(6): 563.

黄敏, 韩汝琦, 甘子钊. 强磁场下n型InSb杂质带及其电导的理论[J]. Chin. J. Semicond., 1985, 6(6): 563..Export: BibTex EndNote

黄敏, 韩汝琦, 甘子钊. 强磁场下n型InSb杂质带及其电导的理论[J]. Chin. J. Semicond., 1985, 6(6): 563...

Gilbert乘法器的三次非线性误差

易明銧, 李青松

Chin. J. Semicond. 1985, 6(6): 576-583

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(6): 576.

易明銧, 李青松. Gilbert乘法器的三次非线性误差[J]. Chin. J. Semicond., 1985, 6(6): 576..Export: BibTex EndNote

易明銧, 李青松. Gilbert乘法器的三次非线性误差[J]. Chin. J. Semicond., 1985, 6(6): 576...

高剂量低能氧离子注入硅形成SiO_2薄膜的研究

王勇, 李维中, 李志坚

Chin. J. Semicond. 1985, 6(6): 584-589

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(6): 584.

王勇, 李维中, 李志坚. 高剂量低能氧离子注入硅形成SiO_2薄膜的研究[J]. Chin. J. Semicond., 1985, 6(6): 584..Export: BibTex EndNote

王勇, 李维中, 李志坚. 高剂量低能氧离子注入硅形成SiO_2薄膜的研究[J]. Chin. J. Semicond., 1985, 6(6): 584...

双异质结半导体激光器在阶跃和正弦电流调制下的行为

王守武, 王仲明

Chin. J. Semicond. 1985, 6(6): 590-601

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(6): 590.

王守武, 王仲明. 双异质结半导体激光器在阶跃和正弦电流调制下的行为[J]. Chin. J. Semicond., 1985, 6(6): 590..Export: BibTex EndNote

王守武, 王仲明. 双异质结半导体激光器在阶跃和正弦电流调制下的行为[J]. Chin. J. Semicond., 1985, 6(6): 590...

CMOS门阵列的一种布线方法

张钦海, 唐璞山

Chin. J. Semicond. 1985, 6(6): 602-610

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(6): 602.

张钦海, 唐璞山. CMOS门阵列的一种布线方法[J]. Chin. J. Semicond., 1985, 6(6): 602..Export: BibTex EndNote

张钦海, 唐璞山. CMOS门阵列的一种布线方法[J]. Chin. J. Semicond., 1985, 6(6): 602...

双极型功率晶体管的温度分布和直流安全工作区

曾庆明

Chin. J. Semicond. 1985, 6(6): 611-619

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(6): 611.

曾庆明. 双极型功率晶体管的温度分布和直流安全工作区[J]. Chin. J. Semicond., 1985, 6(6): 611..Export: BibTex EndNote

曾庆明. 双极型功率晶体管的温度分布和直流安全工作区[J]. Chin. J. Semicond., 1985, 6(6): 611...

脉冲激光诱导扩散的计算机模拟

刘焜, 谢宗钧, 黄乐斌

Chin. J. Semicond. 1985, 6(6): 620-626

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(6): 620.

刘焜, 谢宗钧, 黄乐斌. 脉冲激光诱导扩散的计算机模拟[J]. Chin. J. Semicond., 1985, 6(6): 620..Export: BibTex EndNote

刘焜, 谢宗钧, 黄乐斌. 脉冲激光诱导扩散的计算机模拟[J]. Chin. J. Semicond., 1985, 6(6): 620...

Sigmund元素溅射率公式的修正

陈国樑

Chin. J. Semicond. 1985, 6(6): 627-633

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(6): 627.

陈国樑. Sigmund元素溅射率公式的修正[J]. Chin. J. Semicond., 1985, 6(6): 627..Export: BibTex EndNote

陈国樑. Sigmund元素溅射率公式的修正[J]. Chin. J. Semicond., 1985, 6(6): 627...

Ga_(1-x)Al_xAs和GaAs_(1-x)P_x混晶的长波长光学声子谱

汪兆平, 韩和相, 赵学恕, 李国华, 涂相征

Chin. J. Semicond. 1985, 6(6): 634-640

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(6): 634.

汪兆平, 韩和相, 赵学恕, 李国华, 涂相征. Ga_(1-x)Al_xAs和GaAs_(1-x)P_x混晶的长波长光学声子谱[J]. Chin. J. Semicond., 1985, 6(6): 634..Export: BibTex EndNote

汪兆平, 韩和相, 赵学恕, 李国华, 涂相征. Ga_(1-x)Al_xAs和GaAs_(1-x)P_x混晶的长波长光学声子谱[J]. Chin. J. Semicond., 1985, 6(6): 634...

高浓度注砷和注锑硅的连续氩离子激光退火研究

钱佩信, 林惠旺, 陆永枫, 李冬梅

Chin. J. Semicond. 1985, 6(6): 641-647

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(6): 641.

钱佩信, 林惠旺, 陆永枫, 李冬梅. 高浓度注砷和注锑硅的连续氩离子激光退火研究[J]. Chin. J. Semicond., 1985, 6(6): 641..Export: BibTex EndNote

钱佩信, 林惠旺, 陆永枫, 李冬梅. 高浓度注砷和注锑硅的连续氩离子激光退火研究[J]. Chin. J. Semicond., 1985, 6(6): 641...

电子俘获对φb和热电子流的影响

李肇基

Chin. J. Semicond. 1985, 6(6): 648-654

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(6): 648.

李肇基. 电子俘获对φb和热电子流的影响[J]. Chin. J. Semicond., 1985, 6(6): 648..Export: BibTex EndNote

李肇基. 电子俘获对φb和热电子流的影响[J]. Chin. J. Semicond., 1985, 6(6): 648...

氢化非晶硅液相激光结晶

鲍希茂, 杨敏

Chin. J. Semicond. 1985, 6(6): 655-657

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(6): 655.

鲍希茂, 杨敏. 氢化非晶硅液相激光结晶[J]. Chin. J. Semicond., 1985, 6(6): 655..Export: BibTex EndNote

鲍希茂, 杨敏. 氢化非晶硅液相激光结晶[J]. Chin. J. Semicond., 1985, 6(6): 655...

利用I-V特性确定Schottky势垒中的准费米能级

葛惟锟

Chin. J. Semicond. 1985, 6(6): 658-660

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(6): 658.

葛惟锟. 利用I-V特性确定Schottky势垒中的准费米能级[J]. Chin. J. Semicond., 1985, 6(6): 658..Export: BibTex EndNote

葛惟锟. 利用I-V特性确定Schottky势垒中的准费米能级[J]. Chin. J. Semicond., 1985, 6(6): 658...

大光腔分段压缩-平面复合腔激光器

杜国同, 高鼎三, 杨德林

Chin. J. Semicond. 1985, 6(6): 661-663

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(6): 661.

杜国同, 高鼎三, 杨德林. 大光腔分段压缩-平面复合腔激光器[J]. Chin. J. Semicond., 1985, 6(6): 661..Export: BibTex EndNote

杜国同, 高鼎三, 杨德林. 大光腔分段压缩-平面复合腔激光器[J]. Chin. J. Semicond., 1985, 6(6): 661...

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