Journal of Semiconductors

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Volume 7, Issue 6, Jun 1986

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CONTENTS

P型锗中光子牵引效应

王学忠, 刘继周, 王晓谦, 甘子钊

Chin. J. Semicond. 1986, 7(6): 565-572

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 565.

王学忠, 刘继周, 王晓谦, 甘子钊. P型锗中光子牵引效应[J]. Chin. J. Semicond., 1986, 7(6): 565..Export: BibTex EndNote

王学忠, 刘继周, 王晓谦, 甘子钊. P型锗中光子牵引效应[J]. Chin. J. Semicond., 1986, 7(6): 565...

一种高性能16K(2K×8)NMOS-SRAM的设计与分析

徐葭生, 张明宝, 杨肇敏, 张钟宣

Chin. J. Semicond. 1986, 7(6): 573-581

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 573.

徐葭生, 张明宝, 杨肇敏, 张钟宣. 一种高性能16K(2K×8)NMOS-SRAM的设计与分析[J]. Chin. J. Semicond., 1986, 7(6): 573..Export: BibTex EndNote

徐葭生, 张明宝, 杨肇敏, 张钟宣. 一种高性能16K(2K×8)NMOS-SRAM的设计与分析[J]. Chin. J. Semicond., 1986, 7(6): 573...

三维CMOS集成电路工艺及其性能研究

钱佩信, 马腾阁, 山静, 赵寅鹏, 陈必贤, 林惠旺

Chin. J. Semicond. 1986, 7(6): 582-588

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 582.

钱佩信, 马腾阁, 山静, 赵寅鹏, 陈必贤, 林惠旺. 三维CMOS集成电路工艺及其性能研究[J]. Chin. J. Semicond., 1986, 7(6): 582..Export: BibTex EndNote

钱佩信, 马腾阁, 山静, 赵寅鹏, 陈必贤, 林惠旺. 三维CMOS集成电路工艺及其性能研究[J]. Chin. J. Semicond., 1986, 7(6): 582...

硅中锰施主能级Mn_i~(0/+)的光学性质研究

王占国

Chin. J. Semicond. 1986, 7(6): 589-595

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 589.

王占国. 硅中锰施主能级Mn_i~(0/+)的光学性质研究[J]. Chin. J. Semicond., 1986, 7(6): 589..Export: BibTex EndNote

王占国. 硅中锰施主能级Mn_i~(0/+)的光学性质研究[J]. Chin. J. Semicond., 1986, 7(6): 589...

用AES和XPS技术研究半绝缘多晶硅薄膜

王云珍, 蒋长根

Chin. J. Semicond. 1986, 7(6): 596-601

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 596.

王云珍, 蒋长根. 用AES和XPS技术研究半绝缘多晶硅薄膜[J]. Chin. J. Semicond., 1986, 7(6): 596..Export: BibTex EndNote

王云珍, 蒋长根. 用AES和XPS技术研究半绝缘多晶硅薄膜[J]. Chin. J. Semicond., 1986, 7(6): 596...

SiCl_4-SiH_4-H_2混合源的硅外延生长

汤广平, 刘明登, 全宝富, 赵慕愚

Chin. J. Semicond. 1986, 7(6): 602-607

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 602.

汤广平, 刘明登, 全宝富, 赵慕愚. SiCl_4-SiH_4-H_2混合源的硅外延生长[J]. Chin. J. Semicond., 1986, 7(6): 602..Export: BibTex EndNote

汤广平, 刘明登, 全宝富, 赵慕愚. SiCl_4-SiH_4-H_2混合源的硅外延生长[J]. Chin. J. Semicond., 1986, 7(6): 602...

p(a-SiC:H)/i(a-Si:H)异质界面分析

陈之章, 韩茂畴, 王宗畔, 徐温元

Chin. J. Semicond. 1986, 7(6): 608-611

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 608.

陈之章, 韩茂畴, 王宗畔, 徐温元. p(a-SiC:H)/i(a-Si:H)异质界面分析[J]. Chin. J. Semicond., 1986, 7(6): 608..Export: BibTex EndNote

陈之章, 韩茂畴, 王宗畔, 徐温元. p(a-SiC:H)/i(a-Si:H)异质界面分析[J]. Chin. J. Semicond., 1986, 7(6): 608...

影响Ar~+激光再结晶多晶硅/二氧化硅界面性质的因素

黄信凡, 鲍希茂, 蒋锡平, 文婧, 褚一鸣

Chin. J. Semicond. 1986, 7(6): 612-616

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 612.

黄信凡, 鲍希茂, 蒋锡平, 文婧, 褚一鸣. 影响Ar~+激光再结晶多晶硅/二氧化硅界面性质的因素[J]. Chin. J. Semicond., 1986, 7(6): 612..Export: BibTex EndNote

黄信凡, 鲍希茂, 蒋锡平, 文婧, 褚一鸣. 影响Ar~+激光再结晶多晶硅/二氧化硅界面性质的因素[J]. Chin. J. Semicond., 1986, 7(6): 612...

H_2O在Si(100)面上化学吸附的理论研究

曹培林

Chin. J. Semicond. 1986, 7(6): 617-623

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 617.

曹培林. H_2O在Si(100)面上化学吸附的理论研究[J]. Chin. J. Semicond., 1986, 7(6): 617..Export: BibTex EndNote

曹培林. H_2O在Si(100)面上化学吸附的理论研究[J]. Chin. J. Semicond., 1986, 7(6): 617...

低阈值压缩双异质结构激光器的制造

杜国同, 杨德林, 肖建伟, 高鼎三

Chin. J. Semicond. 1986, 7(6): 624-630

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 624.

杜国同, 杨德林, 肖建伟, 高鼎三. 低阈值压缩双异质结构激光器的制造[J]. Chin. J. Semicond., 1986, 7(6): 624..Export: BibTex EndNote

杜国同, 杨德林, 肖建伟, 高鼎三. 低阈值压缩双异质结构激光器的制造[J]. Chin. J. Semicond., 1986, 7(6): 624...

Si_3N_4膜气相淀积的最佳工艺条件的选择和应用

阮传土

Chin. J. Semicond. 1986, 7(6): 631-637

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 631.

阮传土. Si_3N_4膜气相淀积的最佳工艺条件的选择和应用[J]. Chin. J. Semicond., 1986, 7(6): 631..Export: BibTex EndNote

阮传土. Si_3N_4膜气相淀积的最佳工艺条件的选择和应用[J]. Chin. J. Semicond., 1986, 7(6): 631...

离子注入抗蚀技术

韩阶平, 王培大, 马俊如, 王守武

Chin. J. Semicond. 1986, 7(6): 638-642

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 638.

韩阶平, 王培大, 马俊如, 王守武. 离子注入抗蚀技术[J]. Chin. J. Semicond., 1986, 7(6): 638..Export: BibTex EndNote

韩阶平, 王培大, 马俊如, 王守武. 离子注入抗蚀技术[J]. Chin. J. Semicond., 1986, 7(6): 638...

CWCO_2激光在硅中引入的位错深能谱研究

张新宇, 鲍希茂

Chin. J. Semicond. 1986, 7(6): 643-650

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 643.

张新宇, 鲍希茂. CWCO_2激光在硅中引入的位错深能谱研究[J]. Chin. J. Semicond., 1986, 7(6): 643..Export: BibTex EndNote

张新宇, 鲍希茂. CWCO_2激光在硅中引入的位错深能谱研究[J]. Chin. J. Semicond., 1986, 7(6): 643...

砷化镓隧道发射晶体管

续竞存

Chin. J. Semicond. 1986, 7(6): 651-657

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 651.

续竞存. 砷化镓隧道发射晶体管[J]. Chin. J. Semicond., 1986, 7(6): 651..Export: BibTex EndNote

续竞存. 砷化镓隧道发射晶体管[J]. Chin. J. Semicond., 1986, 7(6): 651...

分子束外延高性能P型GaAs单晶薄膜

梁基本, 孙殿照, 陈宗圭, 黄运衡, 孔梅影

Chin. J. Semicond. 1986, 7(6): 658-660

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 658.

梁基本, 孙殿照, 陈宗圭, 黄运衡, 孔梅影. 分子束外延高性能P型GaAs单晶薄膜[J]. Chin. J. Semicond., 1986, 7(6): 658..Export: BibTex EndNote

梁基本, 孙殿照, 陈宗圭, 黄运衡, 孔梅影. 分子束外延高性能P型GaAs单晶薄膜[J]. Chin. J. Semicond., 1986, 7(6): 658...

剥层椭偏光谱法测定As~+注入Si的损伤分布

洪英, 莫党

Chin. J. Semicond. 1986, 7(6): 661-664

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 661.

洪英, 莫党. 剥层椭偏光谱法测定As~+注入Si的损伤分布[J]. Chin. J. Semicond., 1986, 7(6): 661..Export: BibTex EndNote

洪英, 莫党. 剥层椭偏光谱法测定As~+注入Si的损伤分布[J]. Chin. J. Semicond., 1986, 7(6): 661...

Ga_xIn_(1-x)P_yAs_(1-y)及Ga_xIn_(1-x)P_yAs_(1-y)/InP(110)异质结界面的电子能带结构

徐至中

Chin. J. Semicond. 1986, 7(6): 665-667

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 665.

徐至中. Ga_xIn_(1-x)P_yAs_(1-y)及Ga_xIn_(1-x)P_yAs_(1-y)/InP(110)异质结界面的电子能带结构[J]. Chin. J. Semicond., 1986, 7(6): 665..Export: BibTex EndNote

徐至中. Ga_xIn_(1-x)P_yAs_(1-y)及Ga_xIn_(1-x)P_yAs_(1-y)/InP(110)异质结界面的电子能带结构[J]. Chin. J. Semicond., 1986, 7(6): 665...

Au-Si共晶合金液态金属离子源

张立宝, 葛璜, 马祥彬, 凌仲珪

Chin. J. Semicond. 1986, 7(6): 668-671

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 668.

张立宝, 葛璜, 马祥彬, 凌仲珪. Au-Si共晶合金液态金属离子源[J]. Chin. J. Semicond., 1986, 7(6): 668..Export: BibTex EndNote

张立宝, 葛璜, 马祥彬, 凌仲珪. Au-Si共晶合金液态金属离子源[J]. Chin. J. Semicond., 1986, 7(6): 668...

金刚石结构中填隙原子振动谱

傅英, 徐文兰

Chin. J. Semicond. 1986, 7(6): 672-676

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(6): 672.

傅英, 徐文兰. 金刚石结构中填隙原子振动谱[J]. Chin. J. Semicond., 1986, 7(6): 672..Export: BibTex EndNote

傅英, 徐文兰. 金刚石结构中填隙原子振动谱[J]. Chin. J. Semicond., 1986, 7(6): 672...

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