Journal of Semiconductors

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Volume 16, Issue 3, Mar 1995

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CONTENTS

多量子阱光波导传输特性分析

马春生

Chin. J. Semicond. 1995, 16(3): 161-166

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(3): 161.

马春生. 多量子阱光波导传输特性分析[J]. Chin. J. Semicond., 1995, 16(3): 161..Export: BibTex EndNote

马春生. 多量子阱光波导传输特性分析[J]. Chin. J. Semicond., 1995, 16(3): 161...

在微重力下生长的GaAs：Si单晶结构缺陷的X射线研究

蒋四南，林兰英

Chin. J. Semicond. 1995, 16(3): 167-169

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(3): 167.

蒋四南，林兰英. 在微重力下生长的GaAs：Si单晶结构缺陷的X射线研究[J]. Chin. J. Semicond., 1995, 16(3): 167..Export: BibTex EndNote

蒋四南，林兰英. 在微重力下生长的GaAs：Si单晶结构缺陷的X射线研究[J]. Chin. J. Semicond., 1995, 16(3): 167...

高精度双晶衍射（HRDCD）方法检测InGaAs／GaAs超薄应变层量子阱结构参数

王小军，庄岩，王玉田，庄婉如，王启明，黄美纯

Chin. J. Semicond. 1995, 16(3): 170-176

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(3): 170.

王小军，庄岩，王玉田，庄婉如，王启明，黄美纯. 高精度双晶衍射（HRDCD）方法检测InGaAs／GaAs超薄应变层量子阱结构参数[J]. Chin. J. Semicond., 1995, 16(3): 170..Export: BibTex EndNote

王小军，庄岩，王玉田，庄婉如，王启明，黄美纯. 高精度双晶衍射（HRDCD）方法检测InGaAs／GaAs超薄应变层量子阱结构参数[J]. Chin. J. Semicond., 1995, 16(3): 170...

多孔硅的椭偏光谱研究

莫党，周光增，林位株，张树霖，蔡生民

Chin. J. Semicond. 1995, 16(3): 177-181

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(3): 177.

莫党，周光增，林位株，张树霖，蔡生民. 多孔硅的椭偏光谱研究[J]. Chin. J. Semicond., 1995, 16(3): 177..Export: BibTex EndNote

莫党，周光增，林位株，张树霖，蔡生民. 多孔硅的椭偏光谱研究[J]. Chin. J. Semicond., 1995, 16(3): 177...

MBE生长的p－Hg_（1－x）Cd_xTe外延薄膜变磁场下的Hall系数及电导率

杜庆红，何力，袁诗鑫

Chin. J. Semicond. 1995, 16(3): 182-187

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(3): 182.

杜庆红，何力，袁诗鑫. MBE生长的p－Hg_（1－x）Cd_xTe外延薄膜变磁场下的Hall系数及电导率[J]. Chin. J. Semicond., 1995, 16(3): 182..Export: BibTex EndNote

杜庆红，何力，袁诗鑫. MBE生长的p－Hg_（1－x）Cd_xTe外延薄膜变磁场下的Hall系数及电导率[J]. Chin. J. Semicond., 1995, 16(3): 182...

半导体材料与器件生产工艺尾气中砷、磷、硫的治理及检测

闻瑞梅，梁骏吾，邓礼生，彭永清

Chin. J. Semicond. 1995, 16(3): 188-194

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(3): 188.

闻瑞梅，梁骏吾，邓礼生，彭永清. 半导体材料与器件生产工艺尾气中砷、磷、硫的治理及检测[J]. Chin. J. Semicond., 1995, 16(3): 188..Export: BibTex EndNote

闻瑞梅，梁骏吾，邓礼生，彭永清. 半导体材料与器件生产工艺尾气中砷、磷、硫的治理及检测[J]. Chin. J. Semicond., 1995, 16(3): 188...

Co－Si界面低温（≤450℃）相变的电子显微术研究

张灶利，肖治纲，杜国维

Chin. J. Semicond. 1995, 16(3): 195-200

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(3): 195.

张灶利，肖治纲，杜国维. Co－Si界面低温（≤450℃）相变的电子显微术研究[J]. Chin. J. Semicond., 1995, 16(3): 195..Export: BibTex EndNote

张灶利，肖治纲，杜国维. Co－Si界面低温（≤450℃）相变的电子显微术研究[J]. Chin. J. Semicond., 1995, 16(3): 195...

TW－SLA在耦合腔锁模激光器中的调制特性

孙军强，黄德修，李再光

Chin. J. Semicond. 1995, 16(3): 201-205

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(3): 201.

孙军强，黄德修，李再光. TW－SLA在耦合腔锁模激光器中的调制特性[J]. Chin. J. Semicond., 1995, 16(3): 201..Export: BibTex EndNote

孙军强，黄德修，李再光. TW－SLA在耦合腔锁模激光器中的调制特性[J]. Chin. J. Semicond., 1995, 16(3): 201...

硅膜厚度和背栅对SIMOX／SOI薄膜全耗尽MOSFET特性影响的研究

魏丽琼，程玉华，孙玉秀，阎桂珍，李映雪，武国英，王阳元

Chin. J. Semicond. 1995, 16(3): 206-211

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(3): 206.

魏丽琼，程玉华，孙玉秀，阎桂珍，李映雪，武国英，王阳元. 硅膜厚度和背栅对SIMOX／SOI薄膜全耗尽MOSFET特性影响的研究[J]. Chin. J. Semicond., 1995, 16(3): 206..Export: BibTex EndNote

魏丽琼，程玉华，孙玉秀，阎桂珍，李映雪，武国英，王阳元. 硅膜厚度和背栅对SIMOX／SOI薄膜全耗尽MOSFET特性影响的研究[J]. Chin. J. Semicond., 1995, 16(3): 206...

一种新的模块自动生成技术及其系统

蔡懿慈，洪先龙

Chin. J. Semicond. 1995, 16(3): 212-217

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(3): 212.

蔡懿慈，洪先龙. 一种新的模块自动生成技术及其系统[J]. Chin. J. Semicond., 1995, 16(3): 212..Export: BibTex EndNote

蔡懿慈，洪先龙. 一种新的模块自动生成技术及其系统[J]. Chin. J. Semicond., 1995, 16(3): 212...

一个以时延优化为目标的力指向Steiner树算法

洪先龙

Chin. J. Semicond. 1995, 16(3): 218-223

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(3): 218.

洪先龙. 一个以时延优化为目标的力指向Steiner树算法[J]. Chin. J. Semicond., 1995, 16(3): 218..Export: BibTex EndNote

洪先龙. 一个以时延优化为目标的力指向Steiner树算法[J]. Chin. J. Semicond., 1995, 16(3): 218...

GTR多环FLR结构优化

荆春雷，肖浦英，陈治明

Chin. J. Semicond. 1995, 16(3): 224-228

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(3): 224.

荆春雷，肖浦英，陈治明. GTR多环FLR结构优化[J]. Chin. J. Semicond., 1995, 16(3): 224..Export: BibTex EndNote

荆春雷，肖浦英，陈治明. GTR多环FLR结构优化[J]. Chin. J. Semicond., 1995, 16(3): 224...

用强流金属离子源研究Ti－Si化合物的形成

朱德华，卢红波，柳百新

Chin. J. Semicond. 1995, 16(3): 229-234

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(3): 229.

朱德华，卢红波，柳百新. 用强流金属离子源研究Ti－Si化合物的形成[J]. Chin. J. Semicond., 1995, 16(3): 229..Export: BibTex EndNote

朱德华，卢红波，柳百新. 用强流金属离子源研究Ti－Si化合物的形成[J]. Chin. J. Semicond., 1995, 16(3): 229...

采用SiO_2／Si系扩镓提高扩散质量和器件性能的研究

刘秀喜，赵富贤，薛成山，孙瑛，华士奎

Chin. J. Semicond. 1995, 16(3): 235-240

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(3): 235.

刘秀喜，赵富贤，薛成山，孙瑛，华士奎. 采用SiO_2／Si系扩镓提高扩散质量和器件性能的研究[J]. Chin. J. Semicond., 1995, 16(3): 235..Export: BibTex EndNote

刘秀喜，赵富贤，薛成山，孙瑛，华士奎. 采用SiO_2／Si系扩镓提高扩散质量和器件性能的研究[J]. Chin. J. Semicond., 1995, 16(3): 235...

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