Journal of Semiconductors

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Volume 19, Issue 3, Mar 1998

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CONTENTS

硅中层错带中空位的电子态

王永良

Chin. J. Semicond. 1998, 19(3): 161-165

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 161.

王永良. 硅中层错带中空位的电子态[J]. Chin. J. Semicond., 1998, 19(3): 161..Export: BibTex EndNote

王永良. 硅中层错带中空位的电子态[J]. Chin. J. Semicond., 1998, 19(3): 161...

S钝化GaAs(100)衬底上分子束外延ZnSe薄膜的喇曼光谱研究

史向华, 靳彩霞, 凌震, 俞根才, 王杰, 侯晓远

Chin. J. Semicond. 1998, 19(3): 166-171

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 166.

史向华, 靳彩霞, 凌震, 俞根才, 王杰, 侯晓远. S钝化GaAs(100)衬底上分子束外延ZnSe薄膜的喇曼光谱研究[J]. Chin. J. Semicond., 1998, 19(3): 166..Export: BibTex EndNote

史向华, 靳彩霞, 凌震, 俞根才, 王杰, 侯晓远. S钝化GaAs(100)衬底上分子束外延ZnSe薄膜的喇曼光谱研究[J]. Chin. J. Semicond., 1998, 19(3): 166...

硅基SiN_xO_y∶C~+薄膜的光致发光

廖良生, 刘小兵, 熊祖洪, 何钧, 侯晓远

Chin. J. Semicond. 1998, 19(3): 172-176

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 172.

廖良生, 刘小兵, 熊祖洪, 何钧, 侯晓远. 硅基SiN_xO_y∶C~+薄膜的光致发光[J]. Chin. J. Semicond., 1998, 19(3): 172..Export: BibTex EndNote

廖良生, 刘小兵, 熊祖洪, 何钧, 侯晓远. 硅基SiN_xO_y∶C~+薄膜的光致发光[J]. Chin. J. Semicond., 1998, 19(3): 172...

几种掺杂浓度的GaAs表面Si-δ掺杂结构研究

刘兴权, 陆卫, 陈效双, 乔怡敏, 史国良, 沈学础

Chin. J. Semicond. 1998, 19(3): 177-180

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 177.

刘兴权, 陆卫, 陈效双, 乔怡敏, 史国良, 沈学础. 几种掺杂浓度的GaAs表面Si-δ掺杂结构研究[J]. Chin. J. Semicond., 1998, 19(3): 177..Export: BibTex EndNote

刘兴权, 陆卫, 陈效双, 乔怡敏, 史国良, 沈学础. 几种掺杂浓度的GaAs表面Si-δ掺杂结构研究[J]. Chin. J. Semicond., 1998, 19(3): 177...

CdSe纳米团簇的透射电镜研究

许燕, 林兆军, 陈伟, 白元强, 方克明

Chin. J. Semicond. 1998, 19(3): 181-184

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 181.

许燕, 林兆军, 陈伟, 白元强, 方克明. CdSe纳米团簇的透射电镜研究[J]. Chin. J. Semicond., 1998, 19(3): 181..Export: BibTex EndNote

许燕, 林兆军, 陈伟, 白元强, 方克明. CdSe纳米团簇的透射电镜研究[J]. Chin. J. Semicond., 1998, 19(3): 181...

用正电子湮没方法鉴别InP半导体中的缺陷

陈志权, 胡新文, 王少阶

Chin. J. Semicond. 1998, 19(3): 185-190

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 185.

陈志权, 胡新文, 王少阶. 用正电子湮没方法鉴别InP半导体中的缺陷[J]. Chin. J. Semicond., 1998, 19(3): 185..Export: BibTex EndNote

陈志权, 胡新文, 王少阶. 用正电子湮没方法鉴别InP半导体中的缺陷[J]. Chin. J. Semicond., 1998, 19(3): 185...

AlGaAs/GaAs HEMT中界面态对沟道层电场特性影响的二维数值研究

张兴宏, 杨玉芬, 王占国

Chin. J. Semicond. 1998, 19(3): 191-196

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 191.

张兴宏, 杨玉芬, 王占国. AlGaAs/GaAs HEMT中界面态对沟道层电场特性影响的二维数值研究[J]. Chin. J. Semicond., 1998, 19(3): 191..Export: BibTex EndNote

张兴宏, 杨玉芬, 王占国. AlGaAs/GaAs HEMT中界面态对沟道层电场特性影响的二维数值研究[J]. Chin. J. Semicond., 1998, 19(3): 191...

GaN/6H-SiC紫外探测器的光电流性质研究

臧岚, 杨凯, 张荣, 沈波, 陈志忠, 陈鹏, 周玉刚, 郑有炓, 黄振春

Chin. J. Semicond. 1998, 19(3): 197-201

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 197.

臧岚, 杨凯, 张荣, 沈波, 陈志忠, 陈鹏, 周玉刚, 郑有炓, 黄振春. GaN/6H-SiC紫外探测器的光电流性质研究[J]. Chin. J. Semicond., 1998, 19(3): 197..Export: BibTex EndNote

臧岚, 杨凯, 张荣, 沈波, 陈志忠, 陈鹏, 周玉刚, 郑有炓, 黄振春. GaN/6H-SiC紫外探测器的光电流性质研究[J]. Chin. J. Semicond., 1998, 19(3): 197...

表面杂质浓度分布对晶体管负阻特性的影响

裴素华, 薛成山, 赵善麒

Chin. J. Semicond. 1998, 19(3): 202-205

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 202.

裴素华, 薛成山, 赵善麒. 表面杂质浓度分布对晶体管负阻特性的影响[J]. Chin. J. Semicond., 1998, 19(3): 202..Export: BibTex EndNote

裴素华, 薛成山, 赵善麒. 表面杂质浓度分布对晶体管负阻特性的影响[J]. Chin. J. Semicond., 1998, 19(3): 202...

薄层SOI/MOSFET’s热载流子电流的数值模拟

曹建民, 吴传良, 张文俊, 范辉, 沈文正, 黄敞

Chin. J. Semicond. 1998, 19(3): 206-213

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 206.

曹建民, 吴传良, 张文俊, 范辉, 沈文正, 黄敞. 薄层SOI/MOSFET’s热载流子电流的数值模拟[J]. Chin. J. Semicond., 1998, 19(3): 206..Export: BibTex EndNote

曹建民, 吴传良, 张文俊, 范辉, 沈文正, 黄敞. 薄层SOI/MOSFET’s热载流子电流的数值模拟[J]. Chin. J. Semicond., 1998, 19(3): 206...

TiN覆盖层和Co/Ti/Si三元固相反应改善超薄CoSi_2高温稳定性

刘京, 茹国平, 顾志光, 屈新萍, 李炳宗, 朱剑豪

Chin. J. Semicond. 1998, 19(3): 214-217

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 214.

刘京, 茹国平, 顾志光, 屈新萍, 李炳宗, 朱剑豪. TiN覆盖层和Co/Ti/Si三元固相反应改善超薄CoSi_2高温稳定性[J]. Chin. J. Semicond., 1998, 19(3): 214..Export: BibTex EndNote

刘京, 茹国平, 顾志光, 屈新萍, 李炳宗, 朱剑豪. TiN覆盖层和Co/Ti/Si三元固相反应改善超薄CoSi_2高温稳定性[J]. Chin. J. Semicond., 1998, 19(3): 214...

低阈值1.3μmInGaAsP/InP应变补偿多量子阱DFB激光器LP┐MOCVD生长

陈博, 王圩, 汪孝杰, 张静媛, 朱洪亮, 周帆, 王玉田, 马朝华, 张子莹, 刘国利

Chin. J. Semicond. 1998, 19(3): 218-220

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 218.

陈博, 王圩, 汪孝杰, 张静媛, 朱洪亮, 周帆, 王玉田, 马朝华, 张子莹, 刘国利. 低阈值1.3μmInGaAsP/InP应变补偿多量子阱DFB激光器LP┐MOCVD生长[J]. Chin. J. Semicond., 1998, 19(3): 218..Export: BibTex EndNote

陈博, 王圩, 汪孝杰, 张静媛, 朱洪亮, 周帆, 王玉田, 马朝华, 张子莹, 刘国利. 低阈值1.3μmInGaAsP/InP应变补偿多量子阱DFB激光器LP┐MOCVD生长[J]. Chin. J. Semicond., 1998, 19(3): 218...

CoSi_2超薄外延膜的生长研究

姚振钰, 张国炳, 秦复光, 刘志凯, 张建辉, 林兰英

Chin. J. Semicond. 1998, 19(3): 221-225

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 221.

姚振钰, 张国炳, 秦复光, 刘志凯, 张建辉, 林兰英. CoSi_2超薄外延膜的生长研究[J]. Chin. J. Semicond., 1998, 19(3): 221..Export: BibTex EndNote

姚振钰, 张国炳, 秦复光, 刘志凯, 张建辉, 林兰英. CoSi_2超薄外延膜的生长研究[J]. Chin. J. Semicond., 1998, 19(3): 221...

用GaAs张应变层控制InP衬底上InAs三维岛的有序排列

王本忠, 赵方海, 彭宇恒, 刘式墉

Chin. J. Semicond. 1998, 19(3): 226-228

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 226.

王本忠, 赵方海, 彭宇恒, 刘式墉. 用GaAs张应变层控制InP衬底上InAs三维岛的有序排列[J]. Chin. J. Semicond., 1998, 19(3): 226..Export: BibTex EndNote

王本忠, 赵方海, 彭宇恒, 刘式墉. 用GaAs张应变层控制InP衬底上InAs三维岛的有序排列[J]. Chin. J. Semicond., 1998, 19(3): 226...

3～5.3μmIn_xGa_(1-x)As/Al_yGa_(1-y)As/Al_zGa_(1-z)As非对称台阶量子阱红外探测器

吴文刚, 常凯, 江德生, 李月霞, 郑厚植

Chin. J. Semicond. 1998, 19(3): 229-234

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 229.

吴文刚, 常凯, 江德生, 李月霞, 郑厚植. 3～5.3μmIn_xGa_(1-x)As/Al_yGa_(1-y)As/Al_zGa_(1-z)As非对称台阶量子阱红外探测器[J]. Chin. J. Semicond., 1998, 19(3): 229..Export: BibTex EndNote

吴文刚, 常凯, 江德生, 李月霞, 郑厚植. 3～5.3μmIn_xGa_(1-x)As/Al_yGa_(1-y)As/Al_zGa_(1-z)As非对称台阶量子阱红外探测器[J]. Chin. J. Semicond., 1998, 19(3): 229...

An Improved Analytical Modelfor Minority Carrier Transport in Quasi-Neutral Semiconductor Regions

Ma Pingxi, Zhang Lichun, Zhao Baoying, et al

Chin. J. Semicond. 1998, 19(3): 235-240

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1998, 19(3): 235.

M P xi, Z L chun, Z B ying, E al. An Improved Analytical Modelfor Minority Carrier Transport in Quasi-Neutral Semiconductor Regions[J]. Chin. J. Semicond., 1998, 19(3): 235..Export: BibTex EndNote

M P xi, Z L chun, Z B ying, E al. An Improved Analytical Modelfor Minority Carrier Transport in Quasi-Neutral Semiconductor Regions[J]. Chin. J. Semicond., 1998, 19(3): 235...

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