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Volume 26, Issue 2, Feb 2005


  • Structural Characteristic of CdS Thin films and Their Influence on Cu(in,Ga)Se2(CIGS) Thin Film Solar Cell

    Xue Yuming, Sun Yun, He Qing, Liu Fangfang, Li Changjian,and Ji Mingliang

    Chin. J. Semicond.  2005, 26(2): 225

    Abstract PDF

    Deposition and structural characteristics of cadmium sulfide (CdS) thin films by chemical bath deposition (CBD) technique from a bath containing thiourea,cadmium acetate,ammonium acetate and ammonia in an aqueous solution are reported.Researches are made on the influence of the fundamental parameters including pH,temperature,and concentrations of the solution involved in the chemical bath deposition of CdS and titration or dumping of the thiourea solution on the structure characteristic of CdS thin films.The pH of the solution plays a vital role on the characteristic of the CdS thin films.The XRD patterns show that the change in the pH of the solution results in the change in crystal phase from predominant hexagonal phase to predominant cubic phase.The CdS thin films with the two different crystal phases have different influences on CIGS thin film solar cells.The crystal mismatch and the interface state density of the cCdS(cubic phase CdS) and CIGS are about 1.419% and 8.507×1e12cm-2 respectively,and those of the h-CdS(hexagonal phase CdS) and CIGS are about 32.297% and 2.792×1e12cm-2 respectively.It is necessary for high efficiency CIGS thin film solar cells to deposit the cubic phase CdS thin films.

  • Measurements of Carrier Confinement at β-FeSi2-Si Heterojunction by Electroluminescence

    Li, Cheng,T.Suemasu,and, F., Hasegawa

    Chin. J. Semicond.  2005, 26(2): 230

    Abstract PDF

    A Si p-π-n diode with β-FeSi2 particles embedded in the unintentionally doped Si (p-type) was designed for determining the band offset at β-FeSi2-Si heterojunction.When the diode is under forward bias,the electrons injected via the Si np- junction diffuse to and are confined in the β-FeSi2 particles due to the band offset.The storage charge at theβ-FeSi2-Si heterojunction inversely hamper the further diffusion of electrons,giving rise to the localization of electrons in the p-Si near the Si junction,which prevents them from nonradiative recombination channels.This results in electroluminescence (EL) intensity from both Si and β-FeSi2 quenching slowly up to room temperature.The temperature dependent ratio of EL intensity of β-FeSi2 to Si indicates the loss of electron confinement following thermal excitation model.The conduction band offset between Si and β-FeSi2 is determined to be about 0.2eV.

  • Influence of Floating Body Effect on Radiation Hardness of PD SOI nMOSFETs

    Zhao Hongchen, Hai Chaohe, Han Zhengsheng,and Qian He

    Chin. J. Semicond.  2005, 26(2): 234

    Abstract PDF

    H-gate and closed-gate PD SOI nMOSFETs are fabricated on SIMOX substrate,and the influence of floating body effect on the radiation hardness is studied.All the subthreshold characteristics of the devices do not change much after radiation of the total dose of 1e6rad(Si).The back gate threshold voltage shift of closed-gate is about 33% less than that of Hgate device.The reason should be that the body potential of the closed-gate device is raised due to impact ionization,and an electric field is produced across the BOX.The floating body effect can improve the radiation hardness of the back gate transistor.

  • Design and Fabrication of Schottky Diode with Standard CMOS Process

    Li Qiang, Wang Junyu, Han Yifeng,and Min Hao

    Chin. J. Semicond.  2005, 26(2): 238

    Abstract PDF

    Design and fabrication of Schottky barrier diodes (SBD) with a commercial standard 0.35μm CMOS process are described.In order to reduce the series resistor of Schottky contact,interdigitating the fingers of schottky diode layout is adopted.The I-V,C-V,and S parameter are measured.The parameters of realized SBD such as the saturation current,breakdown voltage,and the Schottky barrier height are given.The SPICE simulation model of the realized SBDs is given.

  • Unified Breakdown Model of SOI RESURF Device with Uniform/Step/Linear Doping Profile

    Guo Yufeng, Zhang Bo, Mao Ping, Li Zhaoji,and Liu Quanwang

    Chin. J. Semicond.  2005, 26(2): 243

    Abstract PDF

    A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail for the step numbers from 0 to infinity.The critic electric field as the function of the geometry parameters and doping profile is derived.For the thick film device,linear doping profile can be replaced by a single or two steps doping profile in the drift region due to a considerable uniformly lateral electric field,almost ideal breakdown voltage,and simplified design and fabrication.The availability of the proposed model is verified by the good accordance among the analytical results,numerical simulations,and reported experiments.

  • Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror

    Wang Yonggang, Ma Xiaoyu, Xue Yinghong, Sun Hong,Zhang Zhigang,and Wang Qingyue

    Chin. J. Semicond.  2005, 26(2): 250

    Abstract PDF

    A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented. Using the mirror as well as an end mirror,passively mode locked Yb∶YAB laser is realized,which produces a pulse as short as 305ps at 1.044μm.The pulse frequency is 375MHz;the output power is 45mW.

  • Design,Fabrication,and Testing of SingleSide Alignment of 16×0.8nm Arrayed Waveguide Grating

    Li, Jian,An, Junming,Wang, Hongjie,Xia, Junlei,and, Hu, Xiongwei

    Chin. J. Semicond.  2005, 26(2): 254

    Abstract PDF

    A novel design of 100GHzspaced 16channel arrayed-waveguide grating (AWG) based on silica-on-silicon chip is reported.AWG is achieved by adding a Ybranch to the AWG and arranging the input/output channel in a neat row,so the whole configuration can be aligned and packaged using only one fiberarray.This configuration can decrease the device’s size,enlarge the minimum radius of curvature,save time on polishing and alignment,and reduce the chip’s fabrication cost.

  • Analysis on Characteristic of Static Induction Transistor Using Mirror Method

    Hu Dongqing, Li Siyuan,and Wang Yongshun

    Chin. J. Semicond.  2005, 26(2): 258

    Abstract PDF

    A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential.The results show that:the potential barrier is directly determined by channel over pinchedoff factor;gate efficiency η decreases as the gate dimension α2 and shifted gate voltage are minished,and what differs from the firstorder theory is that η will tend to zero at the shifted gate voltage tends to zero when VD=0;at low current,the voltage amplification factor μ increases as the drain current rising.When the drain current reaches certain degree,the voltage amplification factor keeps almost constant.In the end,an analytical description of SIT’s characteristic suited to both triodelike and mixed I-V characteristics are obtained.The predicted I-V curves are consistent perfectly with the reported experimental ones.

  • Fabrication of Ultrathin SiO2 Gate Dielectric by Direct Nitrogen Implantation into Silicon Substrate

    Xu Xiaoyan, Cheng Xingzhi, Huang Ru,and Zhang Xing

    Chin. J. Semicond.  2005, 26(2): 266

    Abstract PDF

    Nitrogen implantation in silicon substrate at fixed energy of 35keV and split dose of 1e14~5×1e14cm-2 is performed before gate oxidation.The experiment results indicate that with the increasing of implantation dose of nitrogen,oxidation rate of gate decreases.The retardation in oxide growth is weakened due to thermal annealing after nitrogen implantation.After nitrogen is implanted at the dose of 2×1e14cm-2,initial O2 injection method which is composed of an O2 injection/N2 annealing/main oxidation,is applied for preparation of 3.4nm gate oxide.Compared with the control process,which is composed of N2 annealing/main oxidation,initial O2 injection process suppresses leakage current of the gate oxide.But Qbd and HF C-V characteristics are almost identical for the samples fabricated by two different oxidation processes.

  • Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors

    Mao Rongwei, Zuo Yuhua, Li Chuanbo, Cheng Buwen, Teng Xuegong, Luo Liping, Zhang Heshun, Yu Jinzhong,and Wang Qiming

    Chin. J. Semicond.  2005, 26(2): 271

    Abstract PDF

    A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si.based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.

  • An Efficient MMI SOI Splitter with Multimode Input/Output Waveguides

    Fang Qing, He Yuejiao, Xin Hongli, Li Fang,and Liu Yuliang

    Chin. J. Semicond.  2005, 26(2): 276

    Abstract PDF

    A 1×8 multimode interference power splitter with multimode input/output waveguides in SOI material is designed by the beam propagation method and fabricated by the inductive coupled plasma etching technology for use in fiber optics communication systems.The fabricated device exhibits low loss and good coupling uniformity.The excess loss is lower than 0.8dB,and the uniformity is 0.45dB at the wavelength of 1550nm.Moreover,the polarization dependent loss is lower than 0.7dB at 1550nm.The device size is only 2mm×10mm.

  • Bulk-Silicon Resonant Accelerometer

    Jia Yubin, Hao Yilong,and Zhang Rong

    Chin. J. Semicond.  2005, 26(2): 281

    Abstract PDF

    Resonant accelerometer is designed,which includes two doubleended tuning forks,a proof mass,fourleverage system amplifying inertial force,and drive/sense combs.Each tuning fork is electrostatically actuated and sensed at resonance using comb electrodes.The device is fabricated using MEMS bulk-silicon technology,whose sensitive degree is 27.3Hz/g,and the resolution is 167.8μg.

  • Synthesis Scheme for Low Power Designs Under Timing Constraints

    Wang Ling,Wen Dongxin, Yang Xiaozong,and Jiang Yingta

    Chin. J. Semicond.  2005, 26(2): 287

    Abstract PDF

    To minimize the power consumption with resources operating at multiple voltages a timeconstrained algorithm is presented.The input to the scheme is an unscheduled data flow graph (DFG),and timing or resource constraints.Partitioning is considered with scheduling in the proposed algorithm as multiple voltage design can lead to an increase in interconnection complexity at layout level.That is,in the proposed algorithm power consumption is first reduced by the scheduling step,and then the partitioning step takes over to decrease the interconnection complexity.The timeconstrained algorithm has time complexity of O(n2),where n is the number of nodes in the DFG.Experiments with a number of DSP benchmarks show that the proposed algorithm achieves the power reduction under timing constraints by an average of 46.5%.

  • 正弦平方势与形变超晶格系统的混沌行为

    邓成良, 罗诗裕, 邵明珠

    Chin. J. Semicond.  2005, 26(2): 294

    Abstract PDF


  • SiGe/Ge/SiGe异质结构中自旋极化输运特性的模拟

    邹建平, 田立林, 余志平

    Chin. J. Semicond.  2005, 26(2): 299

    Abstract PDF


  • GaN外延材料中持续光电导的光淬灭

    李娜, 赵德刚, 刘宗顺, 朱建军, 张书明, 杨辉

    Chin. J. Semicond.  2005, 26(2): 304

    Abstract PDF


  • InP基多周期InAs/InAlGaAs量子点阵列的结构和光学性质

    黄秀颀, 刘峰奇, 车晓玲, 刘俊岐, 雷文, 王占国

    Chin. J. Semicond.  2005, 26(2): 309

    Abstract PDF


  • 射频磁控溅射制备ZnO∶Ga透明导电膜及特性

    余旭浒, 马瑾, 计峰, 王玉恒, 王翠英, 马洪磊

    Chin. J. Semicond.  2005, 26(2): 314

    Abstract PDF


  • InP基长波长光发射OEIC材料的MOCVD生长

    江李, 林涛, 韦欣, 王国宏, 张广泽, 张洪波, 马骁宇

    Chin. J. Semicond.  2005, 26(2): 319

    Abstract PDF

    为了生长能满足器件制作所需的外延片,采用低压金属有机物化学气相沉积(LP-MOCVD)方法在半绝缘InP衬底上生长了InP/InGaAs异质结双极晶体管(HBT)结构,1.55μm多量子阱激光二极管(MQW LD)以及两者集成的光发射光电集成电路(OEIC)材料结构。激光器结构的生长温度为655℃,有源区为5个周期的InGaAsP/ InGaAsP多量子阱(阱区λ=1.6μm,垒区λ=1.28μm);HBT结构则采用550℃低温生长,其中基区采用Zn掺杂,掺杂浓度约为2×1019 cm-3。对生长的各种结构分别进行了X射线双晶衍射,光致发光谱(PL)和二次离子质谱仪(SIMS)测试,结果表明所生长的材料结构已满足制作器件的要求。

  • TiO2薄膜制备及其氧敏特性

    戴振清, 孙以材, 潘国峰, 孟凡斌, 李国玉

    Chin. J. Semicond.  2005, 26(2): 324

    Abstract PDF


  • 聚乙二醇含量对纳米TiO2多孔薄膜性质的影响

    步绍静, 靳正国, 刘晓新, 杨立荣, 程志捷

    Chin. J. Semicond.  2005, 26(2): 329

    Abstract PDF


  • 用透过率测试曲线确定半导体薄膜的光学常数和厚度

    沈伟东, 刘旭, 朱勇, 邹桐, 叶辉, 顾培夫

    Chin. J. Semicond.  2005, 26(2): 335

    Abstract PDF


  • 磷铝吸杂在多晶硅太阳电池中的应用

    赵慧, 徐征, 励旭东, 李海玲, 许颖, 赵玉文, 王文静

    Chin. J. Semicond.  2005, 26(2): 341

    Abstract PDF


  • 一种单基极引出结构的硅晶体管

    杨茹, 李国辉, 姬成周, 田晓娜, 韩德俊, 马本堃

    Chin. J. Semicond.  2005, 26(2): 345

    Abstract PDF


  • 部分耗尽型注氟SIMOX器件的电离辐射效应

    李宁, 张国强, 刘忠立, 范楷, 郑中山, 林青, 张正选

    Chin. J. Semicond.  2005, 26(2): 349

    Abstract PDF


  • 双梯度掺杂漂移机制InP/GaP光二极管

    李果华, 孙艳宁, 严辉, Aristo, Yulius, Jerry, M, Woodall

    Chin. J. Semicond.  2005, 26(2): 354

    Abstract PDF


  • 垂直腔半导体光放大器双稳及逻辑特性的理论研究

    潘炜, 张晓霞, 罗斌, 邓果, 李孝峰, 陈建国

    Chin. J. Semicond.  2005, 26(2): 357

    Abstract PDF


  • 利用光聚合反应制作表面平整的聚合物光栅

    周进波, 孙长征, 熊兵, 王健, 罗毅

    Chin. J. Semicond.  2005, 26(2): 363

    Abstract PDF


  • 硅热流量传感器封装的热模拟分析

    高冬晖, 秦明, 黄庆安

    Chin. J. Semicond.  2005, 26(2): 368

    Abstract PDF


  • 梳齿的不平行对电容式微机械传感器可靠工作范围的影响

    董林玺, 车录锋, 王跃林

    Chin. J. Semicond.  2005, 26(2): 373

    Abstract PDF


  • 微加工悬臂梁在横向冲击下的响应分析

    方绪文, 唐洁影, 黄庆安

    Chin. J. Semicond.  2005, 26(2): 379

    Abstract PDF


  • 一种适用于10/100MHz Base TX以太网的新型发射电路

    韩益锋, 李强, 顾沧海, 郑增钰, 李联

    Chin. J. Semicond.  2005, 26(2): 385

    Abstract PDF

    提出了一种新结构发射电路,适用于10/100MHz Base TX以太网,兼容10MHz Base TX和100MHz Base TX两种工作模式,并能在这两种模式间自由切换.电路采用了波形整形,斜率控制,复用线驱动器等技术,使所有参数符合IEEE802.3标准.芯片在SMIC的0.18μm CMOS工艺流片测试,电源电压为3.3V.

  • RTD与PHEMT集成的几个关键工艺

    王建林, 刘忠立, 王良臣, 曾一平, 杨富华, 白云霞

    Chin. J. Semicond.  2005, 26(2): 390

    Abstract PDF


  • 乙二醇辅助多层硅/硅直接键合

    杨道虹, 徐晨, 沈光地

    Chin. J. Semicond.  2005, 26(2): 395

    Abstract PDF


  • 动态串扰优化的开关盒布线

    冯刚, 马光胜, 杜振军

    Chin. J. Semicond.  2005, 26(2): 399

    Abstract PDF


  • 多孔硅新的表面处理技术

    虞献文, 陈燕艳, 应桃开, 程存归, 郁可, 朱自强

    Chin. J. Semicond.  2005, 26(2): 406

    Abstract PDF


  • 兆声清洗法和离心喷射清洗法的比较

    凤坤, 史迅达, 李刚, 许峰, 刘培东

    Chin. J. Semicond.  2005, 26(2): 410

    Abstract PDF


  • Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

    Yang Hui, Chen Lianghui, Zhang Shuming, Chong Ming, Zhu Jianjun, Zhao Degang, Ye Xiaojun, Li Deyao, Liu Zongshun, Duan Lihong, ..

    Chin. J. Semicond.  2005, 26(2): 414

    Abstract PDF

    Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the fullwidth half maximum of 180″ and 185″ for (0002) symmetric reflection and (10-12) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405.9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.


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