Review Articles
  • Silicon-graphene photonic devices

    Yanlong Yin, Jiang Li, Yang Xu, Hon Ki Tsang, Daoxin Dai

    J. Semicond.  2018, 39 (6): 061009

    doi: 10.1088/1674-4926/39/6/061009

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    Silicon photonics has attracted much attention because of the advantages of CMOS (complementary-metal-oxide-semiconductor) compatibility, ultra-high integrated density, etc. Great progress has been achieved in the past decades. However, it is still not easy to realize active silicon photonic devices and circuits by utilizing the material system of pure silicon due to the limitation of the intrinsic properties of silicon. Graphene has been regarded as a promising material for optoelectronics due to its unique properties and thus provides a potential option for realizing active photonic integrated devices on silicon. In this paper, we present a review on recent progress of some silicon-graphene photonic devices for photodetection, all-optical modulation, as well as thermal-tuning.

  • Concept and design of super junction devices

    Bo Zhang, Wentong Zhang, Ming Qiao, Zhenya Zhan, Zhaoji Li

    J. Semicond.  2018, 39 (2): 021001

    doi: 10.1088/1674-4926/39/2/021001

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    The super junction (SJ) has been recognized as the " milestone” of the power MOSFET, which is the most important innovation concept of the voltage-sustaining layer (VSL). The basic structure of the SJ is a typical junction-type VSL (J-VSL) with the periodic N and P regions. However, the conventional VSL is a typical resistance-type VSL (R-VSL) with only an N or P region. It is a qualitative change of the VSL from the R-VSL to the J-VSL, introducing the bulk depletion to increase the doping concentration and optimize the bulk electric field of the SJ. This paper firstly summarizes the development of the SJ, and then the optimization theory of the SJ is discussed for both the vertical and the lateral devices, including the non-full depletion mode, the minimum specific on-resistance optimization method and the equivalent substrate model. The SJ concept breaks the conventional " silicon limit” relationship of RonVB2.5, showing a quasi-linear relationship of RonVB1.03.

  • Recent advances in flexible and wearable organic optoelectronic devices

    Hong Zhu, Yang Shen, Yanqing Li, Jianxin Tang

    J. Semicond.  2018, 39 (1): 011011

    doi: 10.1088/1674-4926/39/1/011011

    Abstract Full Text PDF Get Citation

    Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed.

  • High-speed photodetectors in optical communication system

    Zeping Zhao, Jianguo Liu, Yu Liu, Ninghua Zhu

    J. Semicond.  2017, 38 (12): 121001

    doi: 10.1088/1674-4926/38/12/121001

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    This paper presents a review and discussion for high-speed photodetectors and their applications on optical communications and microwave photonics. A detailed and comprehensive demonstration of high-speed photodetectors from development history, research hotspots to packaging technologies is provided to the best of our knowledge. A few typical applications based on photodetectors are also illustrated, such as free-space optical communications, radio over fiber and millimeter terahertz signal generation systems.

  • Field-effect transistor memories based on ferroelectric polymers

    Yujia Zhang, Haiyang Wang, Lei Zhang, Xiaomeng Chen, Yu Guo, Huabin Sun, Yun Li

    J. Semicond.  2017, 38 (11): 111001

    doi: 10.1088/1674-4926/38/11/111001

    Abstract Full Text PDF Get Citation

    Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications.

  • Resistive random access memory and its applications in storage and nonvolatile logic

    Dongbin Zhu, Yi Li, Wensheng Shen, Zheng Zhou, Lifeng Liu, Xing Zhang

    J. Semicond.  2017, 38 (7): 071002

    doi: 10.1088/1674-4926/38/7/071002

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    The resistive random access memory (RRAM) device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this paper, resistive switching materials, switching mechanism, and memory characteristics of RRAM are discussed. Recent research progress of RRAM in high-density storage and nonvolatile logic application are addressed. Technological trends are also discussed.

  • GaN-based green laser diodes

    Lingrong Jiang, Jianping Liu, Aiqin Tian, Yang Cheng, Zengcheng Li, Liqun Zhang, Shuming Zhang, Deyao Li, M. Ikeda, Hui Yang

    J. Semicond.  2016, 37 (11): 111001

    doi: 10.1088/1674-4926/37/11/111001

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    Recently, many groups have focused on the development of GaN-based green LDs to meet the demand for laser display. Great progresses have been achieved in the past few years even that many challenges exist. In this article, we analysis the challenges to develop GaN-based green LDs, and then the approaches to improve the green LD structure in the aspect of crystalline quality, electrical properties, and epitaxial layer structure are reviewed, especially the work we have done.

  • A review:aluminum nitride MEMS contour-mode resonator

    Yunhong Hou, Meng Zhang, Guowei Han, Chaowei Si, Yongmei Zhao, Jin Ning

    J. Semicond.  2016, 37 (10): 101001

    doi: 10.1088/1674-4926/37/10/101001

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    Over the past several decades, the technology of micro-electromechanical system (MEMS) has advanced. A clear need of miniaturization and integration of electronics components has had new solutions for the next generation of wireless communications. The aluminum nitride (AlN) MEMS contour-mode resonator (CMR) has emerged and become promising and competitive due to the advantages of the small size, high quality factor and frequency, low resistance, compatibility with integrated circuit (IC) technology, and the ability of integrating multi-frequency devices on a single chip. In this article, a comprehensive review of AlN MEMS CMR technology will be presented, including its basic working principle, main structures, fabrication processes, and methods of performance optimization. Among these, the deposition and etching process of the AlN film will be specially emphasized and recent advances in various performance optimization methods of the CMR will be given through specific examples which are mainly focused on temperature compensation and reducing anchor losses. This review will conclude with an assessment of the challenges and future trends of the CMR.

  • Photodetectors based on two dimensional materials

    Zheng Lou, Zhongzhu Liang, Guozhen Shen

    J. Semicond.  2016, 37 (9): 091001

    doi: 10.1088/1674-4926/37/9/091001

    Abstract Full Text PDF Get Citation

    Two-dimensional (2D) materials with unique properties have received a great deal of attention in recent years. This family of materials has rapidly established themselves as intriguing building blocks for versatile nanoelectronic devices that offer promising potential for use in next generation optoelectronics, such as photodetectors. Furthermore, their optoelectronic performance can be adjusted by varying the number of layers. They have demonstrated excellent light absorption, enabling ultrafast and ultrasensitive detection of light in photodetectors, especially in their single-layer structure. Moreover, due to their atomic thickness, outstanding mechanical flexibility, and large breaking strength, these materials have been of great interest for use in flexible devices and strain engineering. Toward that end, several kinds of photodetectors based on 2D materials have been reported. Here, we present a review of the state-of-the-art in photodetectors based on graphene and other 2D materials, such as the graphene, transition metal dichalcogenides, and so on.

  • Research progress of Si-based germanium materials and devices

    Buwen Cheng, Cheng Li, Zhi Liu, Chunlai Xue

    J. Semicond.  2016, 37 (8): 081001

    doi: 10.1088/1674-4926/37/8/081001

    Abstract Full Text PDF Get Citation

    Si-based germanium is considered to be a promising platform for the integration of electronic and photonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as: (1) the nature of indirect band gap of Ge; (2) the epitaxy of dislocation-free Ge layers on Si substrate; and (3) the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on-insulator (GOI) materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n+p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits.

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