2019年JOS入选“中国科技期刊卓越行动计划”
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Current Issue
Volume 43, Issue 1, Jan 2022

    RESEARCH HIGHLIGHTS

  • Anisotropic 2D materials for post-Moore photoelectric devices

    Dingdong Xie, Jie Jiang, Liming Ding

    J. Semicond. 2022, 43(1): 010201

    doi: 10.1088/1674-4926/43/1/010201

    Abstract Full Text PDF Get Citation

  • F-containing cations improve the performance of perovskite solar cells

    Qin Zhou, Chuantian Zuo, Zilong Zhang, Peng Gao, Liming Ding

    J. Semicond. 2022, 43(1): 010202

    doi: 10.1088/1674-4926/43/1/010202

    Abstract Full Text PDF Get Citation

  • Alkali metal cation engineering in organic/inorganic hybrid perovskite solar cells

    Jilin Wang, Ruibin Tang, Lixiu Zhang, Fei Long, Disheng Yao, Liming Ding

    J. Semicond. 2022, 43(1): 010203

    doi: 10.1088/1674-4926/43/1/010203

    Abstract Full Text PDF Get Citation

  • NEWS AND VIEWS

  • All-optical switching based on self-assembled halide perovskite microwires

    Qing Zhang, Jun Zhang

    J. Semicond. 2022, 43(1): 010401

    doi: 10.1088/1674-4926/43/1/010401

    Abstract Full Text PDF Get Citation

  • SHORT COMMUNICATION

  • A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode

    Jing Yang, Degang Zhao, Zongshun Liu, Feng Liang, Ping Chen, Lihong Duan, Hai Wang, Yongsheng Shi

    J. Semicond. 2022, 43(1): 010501

    doi: 10.1088/1674-4926/43/1/010501

    Abstract Full Text PDF Get Citation

  • REVIEWS

  • Twist-angle two-dimensional superlattices and their application in (opto)electronics

    Kaiyao Xin, Xingang Wang, Kasper Grove-Rasmussen, Zhongming Wei

    J. Semicond. 2022, 43(1): 011001

    doi: 10.1088/1674-4926/43/1/011001

    Abstract Full Text PDF Get Citation

    Twist-angle two-dimensional systems, such as twisted bilayer graphene, twisted bilayer transition metal dichalcogenides, twisted bilayer phosphorene and their multilayer van der Waals heterostructures, exhibit novel and tunable properties due to the formation of Moiré superlattice and modulated Moiré bands. The review presents a brief venation on the development of “twistronics” and subsequent applications based on band engineering by twisting. Theoretical predictions followed by experimental realization of magic-angle bilayer graphene ignited the flame of investigation on the new freedom degree, twist-angle, to adjust (opto)electrical behaviors. Then, the merging of Dirac cones and the presence of flat bands gave rise to enhanced light-matter interaction and gate-dependent electrical phases, respectively, leading to applications in photodetectors and superconductor electronic devices. At the same time, the increasing amount of theoretical simulation on extended twisted 2D materials like TMDs and BPs called for further experimental verification. Finally, recently discovered properties in twisted bilayer h-BN evidenced h-BN could be an ideal candidate for dielectric and ferroelectric devices. Hence, both the predictions and confirmed properties imply twist-angle two-dimensional superlattice is a group of promising candidates for next-generation (opto)electronics.

  • Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO x/Al2O3 gate stack by ozone oxidation

    Lixing Zhou, Jinjuan Xiang, Xiaolei Wang, Wenwu Wang

    J. Semicond. 2022, 43(1): 013101

    doi: 10.1088/1674-4926/43/1/013101

    Abstract Full Text PDF Get Citation

    Ge has been an alternative channel material for the performance enhancement of complementary metal–oxide–semiconductor (CMOS) technology applications because of its high carrier mobility and superior compatibility with Si CMOS technology. The gate structure plays a key role on the electrical property. In this paper, the property of Ge MOSFET with Al2O3/GeOx/Ge stack by ozone oxidation is reviewed. The GeOx passivation mechanism by ozone oxidation and band alignment of Al2O3/GeOx/Ge stack is described. In addition, the charge distribution in the gate stack and remote Coulomb scattering on carrier mobility is also presented. The surface passivation is mainly attributed to the high oxidation state of Ge. The energy band alignment is well explained by the gap state theory. The charge distribution is quantitatively characterized and it is found that the gate charges make a great degradation on carrier mobility. These investigations help to provide an impressive understanding and a possible instructive method to improve the performance of Ge devices.

  • ARTICLES

  • Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers

    Tianyi Tang, Tian Yu, Guanqing Yang, Jiaqian Sun, Wenkang Zhan, Bo Xu, Chao Zhao, Zhanguo Wang

    J. Semicond. 2022, 43(1): 012301

    doi: 10.1088/1674-4926/43/1/012301

    Abstract Full Text PDF Get Citation

    InAs/GaAs quantum dot (QD) lasers were grown on silicon substrates using a thin Ge buffer and three-step growth method in the molecular beam epitaxy (MBE) system. In addition, strained superlattices were used to prevent threading dislocations from propagating to the active region of the laser. The as-grown material quality was characterized by the transmission electron microscope, scanning electron microscope, X-ray diffraction, atomic force microscope, and photoluminescence spectroscopy. The results show that a high-quality GaAs buffer with few dislocations was obtained by the growth scheme we developed. A broad-area edge-emitting laser was also fabricated. The O-band laser exhibited a threshold current density of 540 A/cm2 at room temperature under continuous wave conditions. This work demonstrates the potential of large-scale and low-cost manufacturing of the O-band InAs/GaAs quantum dot lasers on silicon substrates.

  • High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission

    K. S. Zhuravlev, A. L. Chizh, K. B. Mikitchuk, A. M. Gilinsky, I. B. Chistokhin, N. A. Valisheva, D. V. Dmitriev, A. I. Toropov, M. S. Aksenov

    J. Semicond. 2022, 43(1): 012302

    doi: 10.1088/1674-4926/43/1/012302

    Abstract Full Text PDF Get Citation

    The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.

  • High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD

    Xiujun Hao, Yan Teng, He Zhu, Jiafeng Liu, Hong Zhu, Yunlong Huai, Meng Li, Baile Chen, Yong Huang, Hui Yang

    J. Semicond. 2022, 43(1): 012303

    doi: 10.1088/1674-4926/43/1/012303

    Abstract Full Text PDF Get Citation

    We demonstrate a high-operating-temperature (HOT) mid-wavelength InAs/GaSb superlattice heterojunction infrared photodetector grown by metal–organic chemical vapor deposition. High crystalline quality and the near-zero lattice mismatch of a InAs/GaSb superlattice on an InAs substrate were evidenced by high-resolution X-ray diffraction. At a bias voltage of –0.1 V and an operating temperature of 200 K, the device exhibited a 50% cutoff wavelength of ~ 4.9 μm, a dark current density of 0.012 A/cm2, and a peak specific detectivity of 2.3 × 109 cm·Hz1/2 /W.

  • A 58-dBΩ 20-Gb/s inverter-based cascode transimpedance amplifier for optical communications

    Quan Pan, Xiongshi Luo

    J. Semicond. 2022, 43(1): 012401

    doi: 10.1088/1674-4926/43/1/012401

    Abstract Full Text PDF Get Citation

    This work presents a high-gain broadband inverter-based cascode transimpedance amplifier fabricated in a 65-nm CMOS process. Multiple bandwidth enhancement techniques, including input bonding wire, input series on-chip inductive peaking and negative capacitance compensation, are adopted to overcome the large off-chip photodiode capacitive loading and the miller capacitance of the input device, achieving an overall bandwidth enhancement ratio of 8.5. The electrical measurement shows TIA achieves 58 dBΩ up to 12.7 GHz with a 180-fF off-chip photodetector. The optical measurement demonstrates a clear open eye of 20 Gb/s. The TIA dissipates 4 mW from a 1.2-V supply voltage.

  • Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films

    R. Rahaman, M. Sharmin, J. Podder

    J. Semicond. 2022, 43(1): 012801

    doi: 10.1088/1674-4926/43/1/012801

    Abstract Full Text PDF Get Citation

    Here we discuss the synthesis of copper (II) oxide (CuO) and manganese (Mn)-doped CuO thin films varying with 0 to 8 at% Mn using the spray pyrolysis technique. As-deposited film surfaces comprised of agglomerated spherical nanoparticles and a semi-spongy porous structure for 4 at% Mn doping. Energy dispersive analysis of X-rays confirmed the chemical composition of the films. X-ray diffraction spectra showed a polycrystalline monoclinic structure with the predominance of the (\begin{document}$ {\overline 1} $\end{document}11) peak. Optical band gap energy for direct and indirect transitions was estimated in the ranges from 2.67–2.90 eV and 0.11–1.73 eV, respectively. Refractive index and static dielectric constants were computed from the optical spectra. Electrical resistivity of CuO and Mn-doped CuO (Mn:CuO) thin films was found in the range from 10.5 to 28.6 Ω·cm. The tiniest electron effective mass was calculated for 4 at% Mn:CuO thin films. P to n-type transition was observed for 4 at% Mn doping in CuO films. Carrier concentration and mobility were found in the orders of 1017 cm–3 and 10–1 cm2/(V·s), respectively. The Hall coefficient was found to be between 9.9 and 29.8 cm3/C. The above results suggest the suitability of Mn:CuO thin films in optoelectronic applications.

  • Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation

    Yongbo Liu, Huilong Zhu, Yongkui Zhang, Xiaolei Wang, Weixing Huang, Chen Li, Xuezheng Ai, Qi Wang

    J. Semicond. 2022, 43(1): 014101

    doi: 10.1088/1674-4926/43/1/014101

    Abstract Full Text PDF Get Citation

    A new type of vertical nanowire (VNW)/nanosheet (VNS) FETs combining a horizontal channel (HC) with bulk/back-gate electrode configuration, including Bulk-HC and FD-SOI-HC VNWFET, is proposed and investigated by TCAD simulation. Comparisons were carried out between conventional VNWFET and the proposed devices. FD-SOI-HC VNWFET exhibits better Ion/Ioff ratio and DIBL than Bulk-HC VNWFET. The impact of channel doping and geometric parameters on the electrical characteristic and body factor (γ) of the devices was investigated. Moreover, threshold voltage modulation by bulk/back-gate bias was implemented and a large γ is achieved for wide range Vth modulation. In addition, results of Ion enhancement and Ioff reduction indicate the proposed devices are promising candidates for performance and power optimization of NW/NS circuits by adopting dynamic threshold voltage management. The results of preliminary experimental data are discussed as well.

  • Frequency dependence on polarization switching measurement in ferroelectric capacitors

    Zhaomeng Gao, Shuxian Lyu, Hangbing Lyu

    J. Semicond. 2022, 43(1): 014102

    doi: 10.1088/1674-4926/43/1/014102

    Abstract Full Text PDF Get Citation

    Ferroelectric hysteresis loop measurement under high driving frequency generally faces great challenges. Parasitic factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous remnant polarization (Pr) and coercive field (Ec). In this study, positive-up-negative-down (PUND) measurement under a wide frequency range was performed on a 10-nm thick Hf0.5Zr0.5O2 ferroelectric film. Detailed analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE capacitor. After considering the time lag caused by RC delay, reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over time. In such a method, rational P–V loops measured at high frequencies (>1 MHz) was successfully achieved. This work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films.

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