First-principle study on anatase TiO2 codoped with nitrogen and ytterbium
J. Semicond. 2010, 31(3): 032001
doi: 10.1088/1674-4926/31/3/032001
Tunnelling piezoresistive effect of grain boundary in polysilicon nano-films
J. Semicond. 2010, 31(3): 032002
doi: 10.1088/1674-4926/31/3/032002
Grain boundary layer behavior in ZnO/Si heterostructure
J. Semicond. 2010, 31(3): 032003
doi: 10.1088/1674-4926/31/3/032003
Fluid model of inductively coupled plasma etcher based on COMSOL
J. Semicond. 2010, 31(3): 032004
doi: 10.1088/1674-4926/31/3/032004
Synthesis and optical properties of nanostructured Ce(OH)4
J. Semicond. 2010, 31(3): 033001
doi: 10.1088/1674-4926/31/3/033001
White light photoluminescence from ZnS films on porous Si substrates
J. Semicond. 2010, 31(3): 033002
doi: 10.1088/1674-4926/31/3/033002
Characteristics of GaN grown on 6H-SiC with different AlN buffers
J. Semicond. 2010, 31(3): 033003
doi: 10.1088/1674-4926/31/3/033003
High performance AlGaN/GaN HEMTs with 2.4 μm source–drain spacing
J. Semicond. 2010, 31(3): 034001
doi: 10.1088/1674-4926/31/3/034001
Insulated gate bipolar transistor with trench gate structure of accumulation channel
J. Semicond. 2010, 31(3): 034002
doi: 10.1088/1674-4926/31/3/034002
J. Semicond. 2010, 31(3): 034003
doi: 10.1088/1674-4926/31/3/034003
J. Semicond. 2010, 31(3): 034004
doi: 10.1088/1674-4926/31/3/034004
J. Semicond. 2010, 31(3): 034005
doi: 10.1088/1674-4926/31/3/034005
J. Semicond. 2010, 31(3): 034006
doi: 10.1088/1674-4926/31/3/034006
High contrast ratio, high uniformity multiple quantum well spatial light modulators
J. Semicond. 2010, 31(3): 034007
doi: 10.1088/1674-4926/31/3/034007
Tapered quantum cascade lasers operating at 9.0 μm
J. Semicond. 2010, 31(3): 034008
doi: 10.1088/1674-4926/31/3/034008
A 4 W K-band GaAs MMIC power amplifier with 22 dB gain
J. Semicond. 2010, 31(3): 035001
doi: 10.1088/1674-4926/31/3/035001
A 4 GHz quadrature output fractional-N frequency synthesizer for an IR-UWB transceiver
J. Semicond. 2010, 31(3): 035002
doi: 10.1088/1674-4926/31/3/035002
A wideband frequency synthesizer for a receiver application at multiple frequencies
J. Semicond. 2010, 31(3): 035003
doi: 10.1088/1674-4926/31/3/035003
A low power wide-band CMOS PLL frequency synthesizer for portable hybrid GNSS receiver
J. Semicond. 2010, 31(3): 035004
doi: 10.1088/1674-4926/31/3/035004
A millimeter-wave monolithic doubly balanced diode mixer
J. Semicond. 2010, 31(3): 035005
doi: 10.1088/1674-4926/31/3/035005
A low power 12-b 40-MS/s pipeline ADC
J. Semicond. 2010, 31(3): 035006
doi: 10.1088/1674-4926/31/3/035006
A 2.5-Gb/s fully-integrated, low-power clock and recovery circuit in 0.18-μm CMOS
J. Semicond. 2010, 31(3): 035007
doi: 10.1088/1674-4926/31/3/035007
Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions
J. Semicond. 2010, 31(3): 036001
doi: 10.1088/1674-4926/31/3/036001
GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution
J. Semicond. 2010, 31(3): 036002
doi: 10.1088/1674-4926/31/3/036002
Influence of hydrogenation on the dark current mechanism of HgCdTe photovoltaic detectors
J. Semicond. 2010, 31(3): 036003
doi: 10.1088/1674-4926/31/3/036003