Archive

Volume 31, Issue 3, Mar 2010

• SEMICONDUCTOR PHYSICS

  First-principle study on anatase TiO₂ codoped with nitrogen and ytterbium

  Gao Pan, Zhang Xuejun, Zhou Wenfang, Wu Jing, Liu Qingju

  J. Semicond.  2010, 31(3): 032001
  doi: 10.1088/1674-4926/31/3/032001

  Tunnelling piezoresistive effect of grain boundary in polysilicon nano-films

  Chuai Rongyan, Liu Bin, Liu Xiaowei, Sun Xianlong, Shi Changzhi, Yang Lijian

  J. Semicond.  2010, 31(3): 032002
  doi: 10.1088/1674-4926/31/3/032002

  Grain boundary layer behavior in ZnO/Si heterostructure

  Liu Bingce, Liu Cihui, Yi Bo

  J. Semicond.  2010, 31(3): 032003
  doi: 10.1088/1674-4926/31/3/032003

  Fluid model of inductively coupled plasma etcher based on COMSOL

  Cheng Jia, Ji Linhong, Zhu Yu, Shi Yixiang

  J. Semicond.  2010, 31(3): 032004
  doi: 10.1088/1674-4926/31/3/032004

• SEMICONDUCTOR MATERIALS

  Synthesis and optical properties of nanostructured Ce(OH)₄

  Ansari A A, Kaushik A

  J. Semicond.  2010, 31(3): 033001
  doi: 10.1088/1674-4926/31/3/033001

  White light photoluminescence from ZnS films on porous Si substrates

  Wang Caifeng, Li Qingshan, Hu Bo, Li Weibing

  J. Semicond.  2010, 31(3): 033002
  doi: 10.1088/1674-4926/31/3/033002

  Characteristics of GaN grown on 6H-SiC with different AlN buffers

  Ding Guojian, Guo Liwei, Xing Zhigang, Chen Yao, Xu Peiqiang, Jia Haiqiang, Zhou Junming, Chen Hong

  J. Semicond.  2010, 31(3): 033003
  doi: 10.1088/1674-4926/31/3/033003

• SEMICONDUCTOR DEVICES

  High performance AlGaN/GaN HEMTs with 2.4 μm source–drain spacing

  Wang Dongfang, Wei Ke, Yuan Tingting, Liu Xinyu

  J. Semicond.  2010, 31(3): 034001
  doi: 10.1088/1674-4926/31/3/034001

  Insulated gate bipolar transistor with trench gate structure of accumulation channel

  Qian Mengliang, Li Zehong, Zhang Bo, Li Zhaoji

  J. Semicond.  2010, 31(3): 034002
  doi: 10.1088/1674-4926/31/3/034002

  Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

  Zheng Yuzhan, Lu Wu, Ren Diyuan, Wang Yiyuan, Wang Zhikuan, Yang Yonghui

  J. Semicond.  2010, 31(3): 034003
  doi: 10.1088/1674-4926/31/3/034003

  Threshold voltage adjustment of organic thin film transistor by introducing a polysilicon floating gate

  Wu Chenglong, Yang Jianhong, Cai Xueyuan, Shan Xiaofeng

  J. Semicond.  2010, 31(3): 034004
  doi: 10.1088/1674-4926/31/3/034004

  A new static induction thyristor with high forward blocking voltage and excellent switching performances

  Zhang Caizhen, Wang Yongshun, Liu Chunjuan, Wang Zaixing

  J. Semicond.  2010, 31(3): 034005
  doi: 10.1088/1674-4926/31/3/034005

  Light-current characteristics of vertical-cavity surface-emitting lasers with external optical feedback

  Zhang Xing, Ning Yongqiang, Sun Yanfang, Zhang Yan, Liu Guangyu, Peng Hangyu, Li Zaijin, Qin Li, Liu Yun, Wang Lijun

  J. Semicond.  2010, 31(3): 034006
  doi: 10.1088/1674-4926/31/3/034006

  High contrast ratio, high uniformity multiple quantum well spatial light modulators

  Huang Yuyang, Liu H C, Wasilewski Z, Buchanan M, Laframboise S R, Yang Chen, Cui Guoxin, Bian Lifeng, Yang Hui, Zhang Yaohui

  J. Semicond.  2010, 31(3): 034007
  doi: 10.1088/1674-4926/31/3/034007

  Tapered quantum cascade lasers operating at 9.0 μm

  Gao Yu, Liu Fengqi, Liu Junqi, Li Lu, Wang Lijun, Wang Zhanguo

  J. Semicond.  2010, 31(3): 034008
  doi: 10.1088/1674-4926/31/3/034008

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A 4 W K-band GaAs MMIC power amplifier with 22 dB gain

  Huang Zhengliang, Yu Faxin, Zheng Yao

  J. Semicond.  2010, 31(3): 035001
  doi: 10.1088/1674-4926/31/3/035001

  A 4 GHz quadrature output fractional-N frequency synthesizer for an IR-UWB transceiver

  Guo Shita, Huang Lu, Yuan Haiquan, Feng Lisong, Liu Zhiming

  J. Semicond.  2010, 31(3): 035002
  doi: 10.1088/1674-4926/31/3/035002

  A wideband frequency synthesizer for a receiver application at multiple frequencies

  Wang Xiaosong, Huang Shuilong, Chen Pufeng, Lei Mumin, Li Zhiqiang, Zhang Haiying

  J. Semicond.  2010, 31(3): 035003
  doi: 10.1088/1674-4926/31/3/035003

  A low power wide-band CMOS PLL frequency synthesizer for portable hybrid GNSS receiver

  Xiao Shimao, Yu Yunfeng, Ma Chengyan, Ye Tianchun, Yin Ming

  J. Semicond.  2010, 31(3): 035004
  doi: 10.1088/1674-4926/31/3/035004

  A millimeter-wave monolithic doubly balanced diode mixer

  Li Qin, Wang Zhigong, Xu Leijun

  J. Semicond.  2010, 31(3): 035005
  doi: 10.1088/1674-4926/31/3/035005

  A low power 12-b 40-MS/s pipeline ADC

  Yin Xiumei, Wei Qi, Xu Lai, Yang Huazhong

  J. Semicond.  2010, 31(3): 035006
  doi: 10.1088/1674-4926/31/3/035006

  A 2.5-Gb/s fully-integrated, low-power clock and recovery circuit in 0.18-μm CMOS

  Zhang Changchun, Wang Zhigong, Shi Si, Guo Yufeng

  J. Semicond.  2010, 31(3): 035007
  doi: 10.1088/1674-4926/31/3/035007

• SEMICONDUCTOR TECHNOLOGY

  Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

  Li Yongliang, Xu Qiuxia

  J. Semicond.  2010, 31(3): 036001
  doi: 10.1088/1674-4926/31/3/036001

  GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution

  Li Zaijin, Hu Liming, Wang Ye, Yang Ye, Peng Hangyu, Zhang Jinlong, Qin Li, Liu Yun, Wang Lijun

  J. Semicond.  2010, 31(3): 036002
  doi: 10.1088/1674-4926/31/3/036002

  Influence of hydrogenation on the dark current mechanism of HgCdTe photovoltaic detectors

  Qiao Hui, Hu Weida, Ye Zhenhua, Li Xiangyang, Gong Haimei

  J. Semicond.  2010, 31(3): 036003
  doi: 10.1088/1674-4926/31/3/036003

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