Archive

Volume 33, Issue 1, Jan 2012

• INVITED PAPERS

  MOS Capacitance–Voltage Characteristics: IV. Trapping Capacitance from 3-Charge-State Impurities

  Jie Binbin, Sah Chihtang

  J. Semicond.  2012, 33(1): 011001
  doi: 10.1088/1674-4926/33/1/011001

• SEMICONDUCTOR PHYSICS

  Effect of rhenium doping on various physical properties of single crystals of MoSe₂

  Mihir M. Vora, Aditya M. Vora

  J. Semicond.  2012, 33(1): 012001
  doi: 10.1088/1674-4926/33/1/012001

  First principle study of the electronic structure of hafnium-doped anatase TiO₂

  Li Lezhong, Yang Weiqing, Ding Yingchun, Zhu Xinghua

  J. Semicond.  2012, 33(1): 012002
  doi: 10.1088/1674-4926/33/1/012002

• SEMICONDUCTOR MATERIALS

  Ferromagnetism in Fe-doped CuO nanopowder

  Zhao Jing, Xia Qinglin, Li Jinmin

  J. Semicond.  2012, 33(1): 013001
  doi: 10.1088/1674-4926/33/1/013001

  Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga₂

  Li Ting, Yan Jinliang, Ding Xingwei, Zhang Liying

  J. Semicond.  2012, 33(1): 013002
  doi: 10.1088/1674-4926/33/1/013002

  Aluminum/MoO₃ anode thin films: an effective anode structure for highperformance flexible organic optoelectronics

  Ding Lei, Zhang Fanghui, Ma Ying, Zhang Maili

  J. Semicond.  2012, 33(1): 013003
  doi: 10.1088/1674-4926/33/1/013003

• SEMICONDUCTOR DEVICES

  Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects

  Toufik Bentrcia, Faycal Djeffal, Abdel Hamid Benhaya

  J. Semicond.  2012, 33(1): 014001
  doi: 10.1088/1674-4926/33/1/014001

  Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

  Ma Juncai, Zhang Jincheng, Xue Junshuai, Lin Zhiyu, Liu Ziyang, Xue Xiaoyong, Ma Xiaohua, Hao Yue

  J. Semicond.  2012, 33(1): 014002
  doi: 10.1088/1674-4926/33/1/014002

  A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE

  Ge Qin, Chen Xiaojuan, Luo Weijun, Yuan Tingting, Pu Yan, Liu Xinyu

  J. Semicond.  2012, 33(1): 014003
  doi: 10.1088/1674-4926/33/1/014003

  High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_max = 256 GHz and BV_CEO = 8.3 V

  Cheng Wei, Zhao Yan, Gao Hanchao, Chen Chen, Yang Naibin

  J. Semicond.  2012, 33(1): 014004
  doi: 10.1088/1674-4926/33/1/014004

  Impact of parasitic resistance on the ESD robustness of high-voltage devices

  Lin Lijuan, Jiang Lingli, Fan Hang, Zhang Bo

  J. Semicond.  2012, 33(1): 014005
  doi: 10.1088/1674-4926/33/1/014005

  Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs

  Cui Jiangwei, Xue Yaoguo, Yu Xuefeng, Ren Diyuan, Lu Jian, Zhang Xingyao

  J. Semicond.  2012, 33(1): 014006
  doi: 10.1088/1674-4926/33/1/014006

  Improved spectral characteristics of 980 nm broad area slotted Fabry-Perot diode lasers

  Gao Zhuo, Wang Jun, Xiong Cong, Liu Yuanyuan, Liu Suping, Ma Xiaoyu

  J. Semicond.  2012, 33(1): 014007
  doi: 10.1088/1674-4926/33/1/014007

  SEE characteristics of small feature size devices by using laser backside testing

  Feng Guoqiang, Shangguan Shipeng, Ma Yingqi, Han Jianwei

  J. Semicond.  2012, 33(1): 014008
  doi: 10.1088/1674-4926/33/1/014008

  Influence of doping position on the extinction ratio of Mach-Zehnder-interference based silicon optical modulators

  Zhao Yong, Wang Wanjun, Shao Haifeng, Yang Jianyi, Wang Minghua, Jiang Xiaoqing

  J. Semicond.  2012, 33(1): 014009
  doi: 10.1088/1674-4926/33/1/014009

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A 3 to 5 GHz low-phase-noise fractional-N frequency synthesizer with adaptive frequency calibration for GSM/PCS/DCS/WCDMA transceivers

  Pan Yaohua, Mei Niansong, Chen Hu, Huang Yumei, Hong Zhiliang

  J. Semicond.  2012, 33(1): 015001
  doi: 10.1088/1674-4926/33/1/015001

  A 1500 mA, 10 MHz on-time controlled buck converter with ripple compensation and efficiency optimization

  Yu Jiale, Lü Danzhu, Hong Zhiliang

  J. Semicond.  2012, 33(1): 015002
  doi: 10.1088/1674-4926/33/1/015002

  A wideband LNA employing gate-inductive-peaking and noise-canceling techniques in 0.18 μm CMOS

  Bao Kuan, Fan Xiangning, Li Wei, Zhang Li, Wang Zhigong

  J. Semicond.  2012, 33(1): 015003
  doi: 10.1088/1674-4926/33/1/015003

  High performance power-configurable preamplifier in a high-density parallel optical receiver

  Wang Xiaoxia, Wang Zhigong

  J. Semicond.  2012, 33(1): 015004
  doi: 10.1088/1674-4926/33/1/015004

  A high dynamic range linear RF power detector with a preceding LNA

  Dai Yingbo, Han Kefeng, Yan Na, Tan Xi

  J. Semicond.  2012, 33(1): 015005
  doi: 10.1088/1674-4926/33/1/015005

  Design of a 0.5 V CMOS cascode low noise amplifier for multi-gigahertz applications

  Liu Baohong, Zhou Jianjun, Mao Junfa

  J. Semicond.  2012, 33(1): 015006
  doi: 10.1088/1674-4926/33/1/015006

  A 18-mW, 20-MHz bandwidth, 12-bit continuous-time ΣΔ modulator using a power-efficient multi-stage amplifier

  Li Ran, Li Jing, Yi Ting, Hong Zhiliang

  J. Semicond.  2012, 33(1): 015007
  doi: 10.1088/1674-4926/33/1/015007

  A high-performance MUX-direct digital frequency synthesizer with quarter ROMs

  Hao Zhikun, Zhang Qiang, Ni Weining, Shi Yin

  J. Semicond.  2012, 33(1): 015008
  doi: 10.1088/1674-4926/33/1/015008

  A 0.8–3 GHz RF-VGA with 35 dB dynamic range in 0.13 μm CMOS

  Qin Xi, Huang Xingli, Qin Yajie, Hong Zhiliang

  J. Semicond.  2012, 33(1): 015009
  doi: 10.1088/1674-4926/33/1/015009

  An IO block array in a radiation-hardened SOI SRAM-based FPGA

  Zhao Yan, Wu Lihua, Han Xiaowei, Li Yan, Zhang Qianli, Chen Liang, Zhang Guoquan, Li Jianzhong, Yang Bo, Gao Jiantou, Wang Jian, Li Ming, Liu Guizhai, Zhang Feng, Guo Xufeng, Zhao Kai, Stanley L. Chen, Yu Fang, Liu Zhongli

  J. Semicond.  2012, 33(1): 015010
  doi: 10.1088/1674-4926/33/1/015010

  An offset cancellation technique in a switched-capacitor comparator for SAR ADCs

  Tong Xingyuan, Zhu Zhangming, Yang Yintang

  J. Semicond.  2012, 33(1): 015011
  doi: 10.1088/1674-4926/33/1/015011

  Direct extraction of equivalent circuit parameters for on-chip spiral transformers

  Wei Jiaju, Wang Zhigong, Li Zhiqun

  J. Semicond.  2012, 33(1): 015012
  doi: 10.1088/1674-4926/33/1/015012

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