MOS Capacitance–Voltage Characteristics: IV. Trapping Capacitance from 3-Charge-State Impurities
J. Semicond. 2012, 33(1): 011001
doi: 10.1088/1674-4926/33/1/011001
Effect of rhenium doping on various physical properties of single crystals of MoSe2
J. Semicond. 2012, 33(1): 012001
doi: 10.1088/1674-4926/33/1/012001
First principle study of the electronic structure of hafnium-doped anatase TiO2
J. Semicond. 2012, 33(1): 012002
doi: 10.1088/1674-4926/33/1/012002
Ferromagnetism in Fe-doped CuO nanopowder
J. Semicond. 2012, 33(1): 013001
doi: 10.1088/1674-4926/33/1/013001
Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga2
J. Semicond. 2012, 33(1): 013002
doi: 10.1088/1674-4926/33/1/013002
J. Semicond. 2012, 33(1): 013003
doi: 10.1088/1674-4926/33/1/013003
Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects
J. Semicond. 2012, 33(1): 014001
doi: 10.1088/1674-4926/33/1/014001
Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage
J. Semicond. 2012, 33(1): 014002
doi: 10.1088/1674-4926/33/1/014002
A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE
J. Semicond. 2012, 33(1): 014003
doi: 10.1088/1674-4926/33/1/014003
J. Semicond. 2012, 33(1): 014004
doi: 10.1088/1674-4926/33/1/014004
Impact of parasitic resistance on the ESD robustness of high-voltage devices
J. Semicond. 2012, 33(1): 014005
doi: 10.1088/1674-4926/33/1/014005
Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs
J. Semicond. 2012, 33(1): 014006
doi: 10.1088/1674-4926/33/1/014006
Improved spectral characteristics of 980 nm broad area slotted Fabry-Perot diode lasers
J. Semicond. 2012, 33(1): 014007
doi: 10.1088/1674-4926/33/1/014007
SEE characteristics of small feature size devices by using laser backside testing
J. Semicond. 2012, 33(1): 014008
doi: 10.1088/1674-4926/33/1/014008
J. Semicond. 2012, 33(1): 014009
doi: 10.1088/1674-4926/33/1/014009
J. Semicond. 2012, 33(1): 015001
doi: 10.1088/1674-4926/33/1/015001
J. Semicond. 2012, 33(1): 015002
doi: 10.1088/1674-4926/33/1/015002
A wideband LNA employing gate-inductive-peaking and noise-canceling techniques in 0.18 μm CMOS
J. Semicond. 2012, 33(1): 015003
doi: 10.1088/1674-4926/33/1/015003
High performance power-configurable preamplifier in a high-density parallel optical receiver
J. Semicond. 2012, 33(1): 015004
doi: 10.1088/1674-4926/33/1/015004
A high dynamic range linear RF power detector with a preceding LNA
J. Semicond. 2012, 33(1): 015005
doi: 10.1088/1674-4926/33/1/015005
Design of a 0.5 V CMOS cascode low noise amplifier for multi-gigahertz applications
J. Semicond. 2012, 33(1): 015006
doi: 10.1088/1674-4926/33/1/015006
J. Semicond. 2012, 33(1): 015007
doi: 10.1088/1674-4926/33/1/015007
A high-performance MUX-direct digital frequency synthesizer with quarter ROMs
J. Semicond. 2012, 33(1): 015008
doi: 10.1088/1674-4926/33/1/015008
A 0.8–3 GHz RF-VGA with 35 dB dynamic range in 0.13 μm CMOS
J. Semicond. 2012, 33(1): 015009
doi: 10.1088/1674-4926/33/1/015009
An IO block array in a radiation-hardened SOI SRAM-based FPGA
J. Semicond. 2012, 33(1): 015010
doi: 10.1088/1674-4926/33/1/015010
An offset cancellation technique in a switched-capacitor comparator for SAR ADCs
J. Semicond. 2012, 33(1): 015011
doi: 10.1088/1674-4926/33/1/015011
Direct extraction of equivalent circuit parameters for on-chip spiral transformers
J. Semicond. 2012, 33(1): 015012
doi: 10.1088/1674-4926/33/1/015012