Most Read
  • High-speed photodetectors in optical communication system 1277

    Zeping Zhao, Jianguo Liu, Yu Liu, Ninghua Zhu

    J. Semicond.  2017, 38(12): 121001

    doi: 10.1088/1674-4926/38/12/121001

    Abstract Full Text PDF Get Citation

    This paper presents a review and discussion for high-speed photodetectors and their applications on optical communications and microwave photonics. A detailed and comprehensive demonstration of high-speed photodetectors from development history, research hotspots to packaging technologies is provided to the best of our knowledge. A few typical applications based on photodetectors are also illustrated, such as free-space optical communications, radio over fiber and millimeter terahertz signal generation systems.

  • Resistive random access memory and its applications in storage and nonvolatile logic 1271

    Dongbin Zhu, Yi Li, Wensheng Shen, Zheng Zhou, Lifeng Liu, Xing Zhang

    J. Semicond.  2017, 38(7): 071002

    doi: 10.1088/1674-4926/38/7/071002

    Abstract Full Text PDF Get Citation

    The resistive random access memory (RRAM) device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this paper, resistive switching materials, switching mechanism, and memory characteristics of RRAM are discussed. Recent research progress of RRAM in high-density storage and nonvolatile logic application are addressed. Technological trends are also discussed.

  • Concept and design of super junction devices 1102

    Bo Zhang, Wentong Zhang, Ming Qiao, Zhenya Zhan, Zhaoji Li

    J. Semicond.  2018, 39(2): 021001

    doi: 10.1088/1674-4926/39/2/021001

    Abstract Full Text PDF Get Citation

    The super junction (SJ) has been recognized as the " milestone” of the power MOSFET, which is the most important innovation concept of the voltage-sustaining layer (VSL). The basic structure of the SJ is a typical junction-type VSL (J-VSL) with the periodic N and P regions. However, the conventional VSL is a typical resistance-type VSL (R-VSL) with only an N or P region. It is a qualitative change of the VSL from the R-VSL to the J-VSL, introducing the bulk depletion to increase the doping concentration and optimize the bulk electric field of the SJ. This paper firstly summarizes the development of the SJ, and then the optimization theory of the SJ is discussed for both the vertical and the lateral devices, including the non-full depletion mode, the minimum specific on-resistance optimization method and the equivalent substrate model. The SJ concept breaks the conventional " silicon limit” relationship of RonVB2.5, showing a quasi-linear relationship of RonVB1.03.

  • Data-driven material discovery for photocatalysis: a short review 1042

    Jinbo Pan, Qimin Yan

    J. Semicond.  2018, 39(7): 071001

    doi: 10.1088/1674-4926/39/7/071001

    Abstract Full Text PDF Get Citation

    In this short review, we introduce recent progress in the research field of data-driven material discovery and design for solar fuel generation. Construction of material databases under the materials genome initiative provides a great platform for material discovery and design by creating computational screening pipelines based on the materials’ descriptors. In the field of solar water splitting, data-driven computational discovery approach has been effective in making material predictions. When combined with synergistic and complimentary experimental efforts, high-throughput computations based on density functional theory showed great predictive power for accelerated discovery of inorganic compounds as functional materials for solar fuel generation. As an example, we introduce the theory–experiment joint discovery of a large set of metal oxide photoanode materials that have been theoretically predicted to be efficient candidates and soon verified by synergistic experimental fabrication and characterization processes. In the field of two-dimensional materials, the application of data-driven approach has realized the prediction of many promising candidates with suitable direct band gaps and optimal band edges for the generation of chemical fuels from sunlight, greatly expanding the number of theoretically predicted 2D photoelectrocatalysts that are awaiting experimental verification. We discuss the challenges for the continued discovery and design of novel bulk and 2D compounds for photocatalysis via a data-driven approach. At the end of this review, we provide a brief outlook for future material discoveries in the field of solar fuel generation.

  • Field-effect transistor memories based on ferroelectric polymers 979

    Yujia Zhang, Haiyang Wang, Lei Zhang, Xiaomeng Chen, Yu Guo, Huabin Sun, Yun Li

    J. Semicond.  2017, 38(11): 111001

    doi: 10.1088/1674-4926/38/11/111001

    Abstract Full Text PDF Get Citation

    Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications.

  • Silicon-graphene photonic devices 886

    Yanlong Yin, Jiang Li, Yang Xu, Hon Ki Tsang, Daoxin Dai

    J. Semicond.  2018, 39(6): 061009

    doi: 10.1088/1674-4926/39/6/061009

    Abstract Full Text PDF Get Citation

    Silicon photonics has attracted much attention because of the advantages of CMOS (complementary-metal-oxide-semiconductor) compatibility, ultra-high integrated density, etc. Great progress has been achieved in the past decades. However, it is still not easy to realize active silicon photonic devices and circuits by utilizing the material system of pure silicon due to the limitation of the intrinsic properties of silicon. Graphene has been regarded as a promising material for optoelectronics due to its unique properties and thus provides a potential option for realizing active photonic integrated devices on silicon. In this paper, we present a review on recent progress of some silicon-graphene photonic devices for photodetection, all-optical modulation, as well as thermal-tuning.

  • Recent progress in Pb-free stable inorganic double halide perovskites 779

    Zhenzhu Li, Wanjian Yin

    J. Semicond.  2018, 39(7): 071003

    doi: 10.1088/1674-4926/39/7/071003

    Abstract Full Text PDF Get Citation

    Although the power conversion efficiency (PCE) of CH3NH3PbI3-based solar cells has achieved 22.1%, which is comparable to commercialized thin-film CdTe and Cu(In,Ga)Se2 solar cells, the long-term stability is the main obstacle for the commercialization of perovskite solar cells. Recent efforts have been made to explore alternative inorganic perovskites, which were assumed to have better stability than organic-inorganic hybrid CH3NH3PbI3. In this short review, we will keep up with experiments and summarize recent progresses of inorganic double halide perovskite, in particular to Cs2AgBiBr6, Cs2AgInCl6, Cs2InBiBr6 and their family members. We will also share our opinions on the promise of such class of materials.

  • Emerging technologies in Si active photonics 721

    Xiaoxin Wang, Jifeng Liu

    J. Semicond.  2018, 39(6): 061001

    doi: 10.1088/1674-4926/39/6/061001

    Abstract Full Text PDF Get Citation

    Silicon photonics for synergistic electronic–photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro-optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronicSilicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro–optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronic–photonic integration with performance inaccessible from conventional Si photonics technologies-photonic integration with performance inaccessible from conventional Si photonics technologies.

  • Recent progress in synthesis of two-dimensional hexagonal boron nitride 669

    Haolin Wang, Yajuan Zhao, Yong Xie, Xiaohua Ma, Xingwang Zhang

    J. Semicond.  2017, 38(3): 031003

    doi: 10.1088/1674-4926/38/3/031003

    Abstract Full Text PDF Get Citation

    Two-dimensional (2D) materials have recently received a great deal of attention due to their unique structures and fascinating properties, as well as their potential applications. 2D hexagonal boron nitride (2D h-BN), an insulator with excellent thermal stability, chemical inertness, and unique electronic and optical properties, and a band gap of 5.97 eV, is considered to be an ideal candidate for integration with other 2D materials. Nevertheless, the controllable growth of high-quality 2D h-BN is still a great challenge. A comprehensive overview of the progress that has been made in the synthesis of 2D h-BN is presented, highlighting the advantages and disadvantages of various synthesis approaches. In addition, the electronic, optical, thermal, and mechanical properties, heterostructures, and related applications of 2D h-BN are discussed.

  • Flexible devices: from materials, architectures to applications 669

    Mingzhi Zou, Yue Ma, Xin Yuan, Yi Hu, Jie Liu, Zhong Jin

    J. Semicond.  2018, 39(1): 011010

    doi: 10.1088/1674-4926/39/1/011010

    Abstract Full Text PDF Get Citation

    Flexible devices, such as flexible electronic devices and flexible energy storage devices, have attracted a significant amount of attention in recent years for their potential applications in modern human lives. The development of flexible devices is moving forward rapidly, as the innovation of methods and manufacturing processes has greatly encouraged the research of flexible devices. This review focuses on advanced materials, architecture designs and abundant applications of flexible devices, and discusses the problems and challenges in current situations of flexible devices. We summarize the discovery of novel materials and the design of new architectures for improving the performance of flexible devices. Finally, we introduce the applications of flexible devices as key components in real life.

  • Frequency equation for the submicron CMOS ring oscillator using the first order characterization 661

    Aravinda Koithyar, T. K. Ramesh

    J. Semicond.  2018, 39(5): 055001

    doi: 10.1088/1674-4926/39/5/055001

    Abstract Full Text PDF Get Citation

    By utilizing the first order behavior of the device, an equation for the frequency of operation of the submicron CMOS ring oscillator is presented. A 5-stage ring oscillator is utilized as the initial design, with different Beta ratios, for the computation of the operating frequency. Later on, the circuit simulation is performed from 5-stage till 23-stage, with the range of oscillating frequency being 3.0817 and 0.6705 GHz respectively. It is noted that the output frequency is inversely proportional to the square of the device length, and when the value of Beta ratio is used as 2.3, a difference of 3.64% is observed on an average, in between the computed and the simulated values of frequency. As an outcome, the derived equation can be utilized, with the inclusion of an empirical constant in general, for arriving at the ring oscillator circuit’s output frequency.

  • Printable inorganic nanomaterials for flexible transparent electrodes: from synthesis to application 600

    Dingrun Wang, Yongfeng Mei, Gaoshan Huang

    J. Semicond.  2018, 39(1): 011002

    doi: 10.1088/1674-4926/39/1/011002

    Abstract Full Text PDF Get Citation

    Printed and flexible electronics are definitely promising cutting-edge electronic technologies of the future. They offer a wide-variety of applications such as flexible circuits, flexible displays, flexible solar cells, skin-like pressure sensors, and radio frequency identification tags in our daily life. As the most-fundamental component of electronics, electrodes are made of conductive materials that play a key role in flexible and printed electronic devices. In this review, various inorganic conductive materials and strategies for obtaining highly conductive and uniform electrodes are demonstrated. Applications of printed electrodes fabricated via these strategies are also described. Nevertheless, there are a number of challenges yet to overcome to optimize the processing and performance of printed electrodes.

  • Fabrication techniques and applications of flexible graphene-based electronic devices 598

    Luqi Tao, Danyang Wang, Song Jiang, Ying Liu, Qianyi Xie, He Tian, Ningqin Deng, Xuefeng Wang, Yi Yang, Tianling Ren

    J. Semicond.  2016, 37(4): 041001

    doi: 10.1088/1674-4926/37/4/041001

    Abstract Full Text PDF Get Citation

    In recent years, flexible electronic devices have become a hot topic of scientific research. These flexible devices are the basis of flexible circuits, flexible batteries, flexible displays and electronic skins. Graphene-based materials are very promising for flexible electronic devices, due to their high mobility, high elasticity, a tunable band gap, quantum electronic transport and high mechanical strength. In this article, we review the recent progress of the fabrication process and the applications of graphene-based electronic devices, including thermal acoustic devices, thermal rectifiers, graphene-based nanogenerators, pressure sensors and graphene-based light-emitting diodes. In summary, although there are still a lot of challenges needing to be solved, graphene-based materials are very promising for various flexible device applications in the future.

  • The oscillations in ESR spectra of Hg0.76Cd0.24Te implanted by Ag+ at the X and Q-bands 587

    A. V. Shestakov, I. I. Fazlizhanov, I. V. Yatsyk, I. F. Gilmutdinov, M. I. Ibragimova, V. A. Shustov, R. M. Eremina

    J. Semicond.  2018, 39(5): 052001

    doi: 10.1088/1674-4926/39/5/052001

    Abstract Full Text PDF Get Citation

    The objects of the investigation were uniformly Ag+ doped Hg0.76Cd0.24Te mercury chalcogenide monocrystals obtained by ion implantation with subsequent thermal annealing over 20 days. After implantation and annealing the conductivity was inverted from n-type with carrier concentration of 1016 cm−3 to p-type with carrier concentration of ≈ 3.9 × 1015 cm−3. The investigations of microwave absorption derivative (dP/dH) showed the existence of strong oscillations in the magnetic field for Ag:Hg0.76Cd0.24Te in the temperature range 4.2–12 K. The concentration and effective mass of charge carrier were determined from oscillation period and temperature dependency of oscillation amplitude. We suppose that this phenomenon is similar to the de Haas–van Alphen effect in weakly correlated electron system with imperfect nesting vector.

  • Impact of crystal orientation and surface scattering on DG-MOSFETs in quasi-ballistic region 582

    Lei Shen, Shaoyan Di, Longxiang Yin, Yun Li, Xiaoyan Liu, Gang Du

    J. Semicond.  2018, 39(7): 074002

    doi: 10.1088/1674-4926/39/7/074002

    Abstract Full Text PDF Get Citation

    In this paper, the characteristics of nano scale n-type double gate MOSFETs with (100) and (110) surfaces are studied using 3D full band ensemble Monte Carlo simulator. The anisotropic surface scattering mechanism is investigated. The (100) case is sensitive to the gate voltage more than the (110) case. The impact of crystal orientation and surface scattering on transport features mainly reflects in the carrier velocity distribution. The electron transport features with (100) direction are greater than that with (110) direction, but are more likely to be affected by the surface scattering.

  • Recent progress of dopant-free organic hole-transporting materials in perovskite solar cells 580

    Dongxue Liu, Yongsheng Liu

    J. Semicond.  2017, 38(1): 011005

    doi: 10.1088/1674-4926/38/1/011005

    Abstract Full Text PDF Get Citation

    Organic-inorganic hybrid perovskite solar cells have undergone especially intense research and transformation over the past seven years due to their enormous progress in conversion efficiencies. In this perspective, we review the latest developments of conventional perovskite solar cells with a main focus on dopant-free organic hole transporting materials (HTMs). Regarding the rapid progress of perovskite solar cells, stability of devices using dopant-free HTMs are also discussed to help readers understand the challenges and opportunities in high performance and stable perovskite solar cells .

  • Asymmetric anode and cathode extraction structure fast recovery diode 568

    Jiaqiang Xie, Li Ma, Yong Gao

    J. Semicond.  2018, 39(5): 054005

    doi: 10.1088/1674-4926/39/5/054005

    Abstract Full Text PDF Get Citation

    This paper presents an asymmetric anode structure and cathode extraction fast and soft recovery diode. The device anode is partial-heavily doped and partial-lightly doped. The P+ region is introduced into the cathode. Firstly, the characteristics of the diode are simulated and analyzed. Secondly, the diode was fabricated and its characteristics were tested. The experimental results are in good agreement with the simulation results. The results show that, compared with the P–i–N diode, although the forward conduction characteristic of the diode is declined, the reverse recovery peak current is reduced by 47%, the reverse recovery time is shortened by 20% and the softness factor is doubled. In addition, the breakdown voltage is increased by 10%.

  • Recent progress of flexible and wearable strain sensors for human-motion monitoring 563

    Gang Ge, Wei Huang, Jinjun Shao, Xiaochen Dong

    J. Semicond.  2018, 39(1): 011012

    doi: 10.1088/1674-4926/39/1/011012

    Abstract Full Text PDF Get Citation

    With the rapid development of human artificial intelligence and the inevitably expanding markets, the past two decades have witnessed an urgent demand for the flexible and wearable devices, especially the flexible strain sensors. Flexible strain sensors, incorporated the merits of stretchability, high sensitivity and skin-mountable, are emerging as an extremely charming domain in virtue of their promising applications in artificial intelligent realms, human-machine systems and health-care devices. In this review, we concentrate on the transduction mechanisms, building blocks of flexible physical sensors, subsequently property optimization in terms of device structures and sensing materials in the direction of practical applications. Perspectives on the existing challenges are also highlighted in the end.

  • Recent advances in preparation,properties and device applications of two-dimensional h-BN and its vertical heterostructures 548

    Huihui Yang, Feng Gao, Mingjin Dai, Dechang Jia, Yu Zhou, Ping'an Hu

    J. Semicond.  2017, 38(3): 031004

    doi: 10.1088/1674-4926/38/3/031004

    Abstract Full Text PDF Get Citation

    Two-dimensional (2D) layered materials, such as graphene, hexagonal boron nitride (h-BN), molybdenum disulfide (MoS2), have attracted tremendous interest due to their atom-thickness structures and excellent physical properties. h-BN has predominant advantages as the dielectric substrate in FET devices due to its outstanding properties such as chemically inert surface, being free of dangling bonds and surface charge traps, especially the large-band-gap insulativity. h-BN involved vertical heterostructures have been widely exploited during the past few years. Such heterostructures adopting h-BN as dielectric layers exhibit enhanced electronic performance, and provide further possibilities for device engineering. Besides, a series of intriguing physical phenomena are observed in certain vertical heterostructures, such as superlattice potential induced replication of Dirac points, band gap tuning, Hofstadter butterfly states, gate-dependent pseudospin mixing. Herein we focus on the rapid developments of h-BN synthesis and fabrication of vertical heterostructures devices based on h-BN, and review the novel properties as well as the potential applications of the heterostructures composed of h-BN.

  • Effect of 1,2,4-triazole on galvanic corrosion between cobalt and copper in CMP based alkaline slurry 546

    Lei Fu, Yuling Liu, Chenwei Wang, Linan Han

    J. Semicond.  2018, 39(4): 046001

    doi: 10.1088/1674-4926/39/4/046001

    Abstract Full Text PDF Get Citation

    Cobalt has become a new type of barrier material with its unique advantages since the copper-interconnects in the great-large scale integrated circuits (GLSI) into 10 nm and below technical nodes, but cobalt and copper have severe galvanic corrosion during chemical–mechanical flattening. The effect of 1,2,4-triazole on Co/Cu galvanic corrosion in alkaline slurry and the control of rate selectivity of copper and cobalt were investigated in this work. The results of electrochemical experiments and polishing experiments had indicated that a certain concentration of 1,2,4-triazole could form a layer of insoluble and dense passive film on the surface of cobalt and copper, which reduced the corrosion potential difference between cobalt and copper. Meantime, the removal rate of cobalt and copper could be effectively controlled according to demand during the CMP process. When the study optimized slurry was composed of 0.5 wt% colloidal silica, 0.1 %vol. hydrogen peroxide, 0.05 wt% FA/O, 345 ppm 1,2,4-triazole, cobalt had higher corrosion potential than copper and the galvanic corrosion could be reduced effectively when the corrosion potential difference between them decreased to 1 mV and the galvanic corrosion current density reached 0.02 nA/cm2. Meanwhile, the removal rate of Co was 62.396 nm/min, the removal rate of Cu was 47.328 nm/min, so that the removal rate ratio of cobalt and copper was 1.32 : 1, which was a good amendment to the dishing pits. The contact potential corrosion of Co/Cu was very weak, which could be better for meeting the requirements of the barrier CMP.

Search

Advanced Search >>

Issues