Journal of Semiconductors

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Volume 17, Issue 10, Oct 1996

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CONTENTS

（Hg，Cd）Te薄腰的LPE生长条件与纵向组分分布

李标，褚君浩，朱基千，陈新强，曹菊英，汤定元

Chin. J. Semicond. 1996, 17(10): 721-728

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(10): 721.

李标，褚君浩，朱基千，陈新强，曹菊英，汤定元. （Hg，Cd）Te薄腰的LPE生长条件与纵向组分分布[J]. Chin. J. Semicond., 1996, 17(10): 721..Export: BibTex EndNote

李标，褚君浩，朱基千，陈新强，曹菊英，汤定元. （Hg，Cd）Te薄腰的LPE生长条件与纵向组分分布[J]. Chin. J. Semicond., 1996, 17(10): 721...

通用薄膜双栅SOI MOSFET电流模型

陈占平，魏丽琼，许铭真，谭长华，王阳元

Chin. J. Semicond. 1996, 17(10): 729-734

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(10): 729.

陈占平，魏丽琼，许铭真，谭长华，王阳元. 通用薄膜双栅SOI MOSFET电流模型[J]. Chin. J. Semicond., 1996, 17(10): 729..Export: BibTex EndNote

陈占平，魏丽琼，许铭真，谭长华，王阳元. 通用薄膜双栅SOI MOSFET电流模型[J]. Chin. J. Semicond., 1996, 17(10): 729...

直接调制1．3μm DC－PBH珐珀半导体激光器的非线性动力学研究

张正线，林志瑗

Chin. J. Semicond. 1996, 17(10): 735-741

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(10): 735.

张正线，林志瑗. 直接调制1．3μm DC－PBH珐珀半导体激光器的非线性动力学研究[J]. Chin. J. Semicond., 1996, 17(10): 735..Export: BibTex EndNote

张正线，林志瑗. 直接调制1．3μm DC－PBH珐珀半导体激光器的非线性动力学研究[J]. Chin. J. Semicond., 1996, 17(10): 735...

可用于GaAlAs／GaAs异质结发光器件应力设计的应力分布计算方法

李炳辉，李志宏，韩汝琦，王阳元

Chin. J. Semicond. 1996, 17(10): 742-747

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(10): 742.

李炳辉，李志宏，韩汝琦，王阳元. 可用于GaAlAs／GaAs异质结发光器件应力设计的应力分布计算方法[J]. Chin. J. Semicond., 1996, 17(10): 742..Export: BibTex EndNote

李炳辉，李志宏，韩汝琦，王阳元. 可用于GaAlAs／GaAs异质结发光器件应力设计的应力分布计算方法[J]. Chin. J. Semicond., 1996, 17(10): 742...

聚丁二炔晶体中光电导的电场依赖性

陈小华，彭景翠，颜永红

Chin. J. Semicond. 1996, 17(10): 748-752

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(10): 748.

陈小华，彭景翠，颜永红. 聚丁二炔晶体中光电导的电场依赖性[J]. Chin. J. Semicond., 1996, 17(10): 748..Export: BibTex EndNote

陈小华，彭景翠，颜永红. 聚丁二炔晶体中光电导的电场依赖性[J]. Chin. J. Semicond., 1996, 17(10): 748...

可调谐主动锁模半导体激光器实验研究

贾刚，衣茂斌，高鼎三

Chin. J. Semicond. 1996, 17(10): 753-756

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(10): 753.

贾刚，衣茂斌，高鼎三. 可调谐主动锁模半导体激光器实验研究[J]. Chin. J. Semicond., 1996, 17(10): 753..Export: BibTex EndNote

贾刚，衣茂斌，高鼎三. 可调谐主动锁模半导体激光器实验研究[J]. Chin. J. Semicond., 1996, 17(10): 753...

微型固态库仑滴定传感器的研制

陈伟平，王东红，虞惇，王贵华

Chin. J. Semicond. 1996, 17(10): 757-761

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(10): 757.

陈伟平，王东红，虞惇，王贵华. 微型固态库仑滴定传感器的研制[J]. Chin. J. Semicond., 1996, 17(10): 757..Export: BibTex EndNote

陈伟平，王东红，虞惇，王贵华. 微型固态库仑滴定传感器的研制[J]. Chin. J. Semicond., 1996, 17(10): 757...

低温半导体器件模拟软件包

王明网，魏同立，李垚，肖志雄

Chin. J. Semicond. 1996, 17(10): 762-768

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(10): 762.

王明网，魏同立，李垚，肖志雄. 低温半导体器件模拟软件包[J]. Chin. J. Semicond., 1996, 17(10): 762..Export: BibTex EndNote

王明网，魏同立，李垚，肖志雄. 低温半导体器件模拟软件包[J]. Chin. J. Semicond., 1996, 17(10): 762...

微氮直拉硅单晶中氮杂质的施主行为

张溪文，杨建松，李立本，阙端麟

Chin. J. Semicond. 1996, 17(10): 769-774

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(10): 769.

张溪文，杨建松，李立本，阙端麟. 微氮直拉硅单晶中氮杂质的施主行为[J]. Chin. J. Semicond., 1996, 17(10): 769..Export: BibTex EndNote

张溪文，杨建松，李立本，阙端麟. 微氮直拉硅单晶中氮杂质的施主行为[J]. Chin. J. Semicond., 1996, 17(10): 769...

Ar~＋背面轰击对SiO_xN_y栅介质的n－MOSFET迁移率和跨导的影响

李观启，黄美浅，曾绍鸿，曾旭

Chin. J. Semicond. 1996, 17(10): 775-779

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(10): 775.

李观启，黄美浅，曾绍鸿，曾旭. Ar~＋背面轰击对SiO_xN_y栅介质的n－MOSFET迁移率和跨导的影响[J]. Chin. J. Semicond., 1996, 17(10): 775..Export: BibTex EndNote

李观启，黄美浅，曾绍鸿，曾旭. Ar~＋背面轰击对SiO_xN_y栅介质的n－MOSFET迁移率和跨导的影响[J]. Chin. J. Semicond., 1996, 17(10): 775...

硅基铁电薄膜的制备和特性研究

陈峥，汤庭鳌

Chin. J. Semicond. 1996, 17(10): 780-783

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(10): 780.

陈峥，汤庭鳌. 硅基铁电薄膜的制备和特性研究[J]. Chin. J. Semicond., 1996, 17(10): 780..Export: BibTex EndNote

陈峥，汤庭鳌. 硅基铁电薄膜的制备和特性研究[J]. Chin. J. Semicond., 1996, 17(10): 780...

利用快速热退火在n－GaAs上形成Ge／PdGe欧姆接触

陈维德，谢小龙，崔玉德，段俐宏，许振嘉

Chin. J. Semicond. 1996, 17(10): 784-788

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(10): 784.

陈维德，谢小龙，崔玉德，段俐宏，许振嘉. 利用快速热退火在n－GaAs上形成Ge／PdGe欧姆接触[J]. Chin. J. Semicond., 1996, 17(10): 784..Export: BibTex EndNote

陈维德，谢小龙，崔玉德，段俐宏，许振嘉. 利用快速热退火在n－GaAs上形成Ge／PdGe欧姆接触[J]. Chin. J. Semicond., 1996, 17(10): 784...

注Si~＋热氧化SiO_2薄膜的蓝光发射及其退火特性

廖良生，鲍希茂，郑祥钦，李宁生，闵乃本

Chin. J. Semicond. 1996, 17(10): 789-792

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(10): 789.

廖良生，鲍希茂，郑祥钦，李宁生，闵乃本. 注Si~＋热氧化SiO_2薄膜的蓝光发射及其退火特性[J]. Chin. J. Semicond., 1996, 17(10): 789..Export: BibTex EndNote

廖良生，鲍希茂，郑祥钦，李宁生，闵乃本. 注Si~＋热氧化SiO_2薄膜的蓝光发射及其退火特性[J]. Chin. J. Semicond., 1996, 17(10): 789...

自组织生长InAs量子点发光的温度特性

吕振东，杨小平，袁之良，徐仲英，郑宝真，许继宗，陈弘，黄绮，周均铭，王建农，王玉琦，葛惟昆

Chin. J. Semicond. 1996, 17(10): 793-796

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(10): 793.

吕振东，杨小平，袁之良，徐仲英，郑宝真，许继宗，陈弘，黄绮，周均铭，王建农，王玉琦，葛惟昆. 自组织生长InAs量子点发光的温度特性[J]. Chin. J. Semicond., 1996, 17(10): 793..Export: BibTex EndNote

吕振东，杨小平，袁之良，徐仲英，郑宝真，许继宗，陈弘，黄绮，周均铭，王建农，王玉琦，葛惟昆. 自组织生长InAs量子点发光的温度特性[J]. Chin. J. Semicond., 1996, 17(10): 793...

半导和非半导性BaTiO_3陶瓷电声像衬度来源的差异

张冰阳，杨阳，江福明，惠森兴，姚烈，殷庆瑞，钱梦禄

Chin. J. Semicond. 1996, 17(10): 797-800

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(10): 797.

张冰阳，杨阳，江福明，惠森兴，姚烈，殷庆瑞，钱梦禄. 半导和非半导性BaTiO_3陶瓷电声像衬度来源的差异[J]. Chin. J. Semicond., 1996, 17(10): 797..Export: BibTex EndNote

张冰阳，杨阳，江福明，惠森兴，姚烈，殷庆瑞，钱梦禄. 半导和非半导性BaTiO_3陶瓷电声像衬度来源的差异[J]. Chin. J. Semicond., 1996, 17(10): 797...

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