Journal of Semiconductors

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Volume 8, Issue 4, Apr 1987

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CONTENTS

用离子自注入改善SOS单晶膜质量的研究

范仁永, 郁元桓, 褚一鸣, 殷士端, 林兰英

Chin. J. Semicond. 1987, 8(4): 337-344

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 337.

范仁永, 郁元桓, 褚一鸣, 殷士端, 林兰英. 用离子自注入改善SOS单晶膜质量的研究[J]. Chin. J. Semicond., 1987, 8(4): 337..Export: BibTex EndNote

范仁永, 郁元桓, 褚一鸣, 殷士端, 林兰英. 用离子自注入改善SOS单晶膜质量的研究[J]. Chin. J. Semicond., 1987, 8(4): 337...

横向电压型压力传感器灵敏度的几何效应

鲍敏杭, 齐薇佳, 王言

Chin. J. Semicond. 1987, 8(4): 345-350

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 345.

鲍敏杭, 齐薇佳, 王言. 横向电压型压力传感器灵敏度的几何效应[J]. Chin. J. Semicond., 1987, 8(4): 345..Export: BibTex EndNote

鲍敏杭, 齐薇佳, 王言. 横向电压型压力传感器灵敏度的几何效应[J]. Chin. J. Semicond., 1987, 8(4): 345...

Si(331)-6×2表面相及其氧吸附特性

邢益荣

Chin. J. Semicond. 1987, 8(4): 351-355

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 351.

邢益荣. Si(331)-6×2表面相及其氧吸附特性[J]. Chin. J. Semicond., 1987, 8(4): 351..Export: BibTex EndNote

邢益荣. Si(331)-6×2表面相及其氧吸附特性[J]. Chin. J. Semicond., 1987, 8(4): 351...

亚稳半导体(GaAs)_(1-x)(Ge_2)_x的能带结构

徐至中

Chin. J. Semicond. 1987, 8(4): 356-361

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 356.

徐至中. 亚稳半导体(GaAs)_(1-x)(Ge_2)_x的能带结构[J]. Chin. J. Semicond., 1987, 8(4): 356..Export: BibTex EndNote

徐至中. 亚稳半导体(GaAs)_(1-x)(Ge_2)_x的能带结构[J]. Chin. J. Semicond., 1987, 8(4): 356...

微波功率晶体管管内匹配网络

徐天东

Chin. J. Semicond. 1987, 8(4): 362-370

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 362.

徐天东. 微波功率晶体管管内匹配网络[J]. Chin. J. Semicond., 1987, 8(4): 362..Export: BibTex EndNote

徐天东. 微波功率晶体管管内匹配网络[J]. Chin. J. Semicond., 1987, 8(4): 362...

MOS器件三维数值模拟

陈大同, 吴启明, 王泽毅, 李志坚

Chin. J. Semicond. 1987, 8(4): 371-377

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 371.

陈大同, 吴启明, 王泽毅, 李志坚. MOS器件三维数值模拟[J]. Chin. J. Semicond., 1987, 8(4): 371..Export: BibTex EndNote

陈大同, 吴启明, 王泽毅, 李志坚. MOS器件三维数值模拟[J]. Chin. J. Semicond., 1987, 8(4): 371...

两微米外延N阱CMOS艺的研究

马槐楠, 徐葭生

Chin. J. Semicond. 1987, 8(4): 378-384

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 378.

马槐楠, 徐葭生. 两微米外延N阱CMOS艺的研究[J]. Chin. J. Semicond., 1987, 8(4): 378..Export: BibTex EndNote

马槐楠, 徐葭生. 两微米外延N阱CMOS艺的研究[J]. Chin. J. Semicond., 1987, 8(4): 378...

P埋层GaAs MESFET研究

史常忻, 李晓明, 忻尚衡, 陈益新

Chin. J. Semicond. 1987, 8(4): 385-390

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 385.

史常忻, 李晓明, 忻尚衡, 陈益新. P埋层GaAs MESFET研究[J]. Chin. J. Semicond., 1987, 8(4): 385..Export: BibTex EndNote

史常忻, 李晓明, 忻尚衡, 陈益新. P埋层GaAs MESFET研究[J]. Chin. J. Semicond., 1987, 8(4): 385...

硅禁带宽度的温度关系

易明銧

Chin. J. Semicond. 1987, 8(4): 391-394

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 391.

易明銧. 硅禁带宽度的温度关系[J]. Chin. J. Semicond., 1987, 8(4): 391..Export: BibTex EndNote

易明銧. 硅禁带宽度的温度关系[J]. Chin. J. Semicond., 1987, 8(4): 391...

二元化合物总原子溅射率和刻蚀速率的经验公式

陈国樑

Chin. J. Semicond. 1987, 8(4): 395-401

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 395.

陈国樑. 二元化合物总原子溅射率和刻蚀速率的经验公式[J]. Chin. J. Semicond., 1987, 8(4): 395..Export: BibTex EndNote

陈国樑. 二元化合物总原子溅射率和刻蚀速率的经验公式[J]. Chin. J. Semicond., 1987, 8(4): 395...

条形半导体激光器中电过程和光波导过程的精确理论

郭长志, 丁凡

Chin. J. Semicond. 1987, 8(4): 402-409

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 402.

郭长志, 丁凡. 条形半导体激光器中电过程和光波导过程的精确理论[J]. Chin. J. Semicond., 1987, 8(4): 402..Export: BibTex EndNote

郭长志, 丁凡. 条形半导体激光器中电过程和光波导过程的精确理论[J]. Chin. J. Semicond., 1987, 8(4): 402...

流体静压力下窄禁带Hg_(1-x)Cd_xTe电学性质的研究

刘冉, 沈学础

Chin. J. Semicond. 1987, 8(4): 410-417

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 410.

刘冉, 沈学础. 流体静压力下窄禁带Hg_(1-x)Cd_xTe电学性质的研究[J]. Chin. J. Semicond., 1987, 8(4): 410..Export: BibTex EndNote

刘冉, 沈学础. 流体静压力下窄禁带Hg_(1-x)Cd_xTe电学性质的研究[J]. Chin. J. Semicond., 1987, 8(4): 410...

Si中注入Zn的辐射损伤

殷士端, 张敬平, 顾诠, 许振嘉, 刘家瑞, 章其初, 李大万

Chin. J. Semicond. 1987, 8(4): 418-422

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 418.

殷士端, 张敬平, 顾诠, 许振嘉, 刘家瑞, 章其初, 李大万. Si中注入Zn的辐射损伤[J]. Chin. J. Semicond., 1987, 8(4): 418..Export: BibTex EndNote

殷士端, 张敬平, 顾诠, 许振嘉, 刘家瑞, 章其初, 李大万. Si中注入Zn的辐射损伤[J]. Chin. J. Semicond., 1987, 8(4): 418...

半导体材料表面光洁度对光吸收表观值的影响

王桂芬, 马根源, 张光寅

Chin. J. Semicond. 1987, 8(4): 423-425

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 423.

王桂芬, 马根源, 张光寅. 半导体材料表面光洁度对光吸收表观值的影响[J]. Chin. J. Semicond., 1987, 8(4): 423..Export: BibTex EndNote

王桂芬, 马根源, 张光寅. 半导体材料表面光洁度对光吸收表观值的影响[J]. Chin. J. Semicond., 1987, 8(4): 423...

键轨道参数的直接计算

钟学富

Chin. J. Semicond. 1987, 8(4): 426-428

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 426.

钟学富. 键轨道参数的直接计算[J]. Chin. J. Semicond., 1987, 8(4): 426..Export: BibTex EndNote

钟学富. 键轨道参数的直接计算[J]. Chin. J. Semicond., 1987, 8(4): 426...

锗硅单晶扩散系数理论探讨及各晶向扩硼实验

陈忠景, 陈为民, 林政伟

Chin. J. Semicond. 1987, 8(4): 429-432

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 429.

陈忠景, 陈为民, 林政伟. 锗硅单晶扩散系数理论探讨及各晶向扩硼实验[J]. Chin. J. Semicond., 1987, 8(4): 429..Export: BibTex EndNote

陈忠景, 陈为民, 林政伟. 锗硅单晶扩散系数理论探讨及各晶向扩硼实验[J]. Chin. J. Semicond., 1987, 8(4): 429...

a-Si_(1-x)C_x:H/pn~(-in)结构的蓝白色电致发光

张仿清, 张亚非, 陈光华

Chin. J. Semicond. 1987, 8(4): 433-436

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 433.

张仿清, 张亚非, 陈光华. a-Si_(1-x)C_x:H/pn~(-in)结构的蓝白色电致发光[J]. Chin. J. Semicond., 1987, 8(4): 433..Export: BibTex EndNote

张仿清, 张亚非, 陈光华. a-Si_(1-x)C_x:H/pn~(-in)结构的蓝白色电致发光[J]. Chin. J. Semicond., 1987, 8(4): 433...

近红外全离子注入平面结构锗雪崩光电探测器的研制

丁国庆, 阚希文

Chin. J. Semicond. 1987, 8(4): 437-442

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 437.

丁国庆, 阚希文. 近红外全离子注入平面结构锗雪崩光电探测器的研制[J]. Chin. J. Semicond., 1987, 8(4): 437..Export: BibTex EndNote

丁国庆, 阚希文. 近红外全离子注入平面结构锗雪崩光电探测器的研制[J]. Chin. J. Semicond., 1987, 8(4): 437...

GaAs IC逻辑门静态特性的分析

史常忻, 余兴

Chin. J. Semicond. 1987, 8(4): 443-444

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 443.

史常忻, 余兴. GaAs IC逻辑门静态特性的分析[J]. Chin. J. Semicond., 1987, 8(4): 443..Export: BibTex EndNote

史常忻, 余兴. GaAs IC逻辑门静态特性的分析[J]. Chin. J. Semicond., 1987, 8(4): 443...

高阻化合物电阻率的测量方法

祁增芳

Chin. J. Semicond. 1987, 8(4): 445-448

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 445.

祁增芳. 高阻化合物电阻率的测量方法[J]. Chin. J. Semicond., 1987, 8(4): 445..Export: BibTex EndNote

祁增芳. 高阻化合物电阻率的测量方法[J]. Chin. J. Semicond., 1987, 8(4): 445...

第二届全国多值逻辑学术讨论会在重庆大学召开

黄开源

Chin. J. Semicond. 1987, 8(4): 449-449

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(4): 449.

黄开源. 第二届全国多值逻辑学术讨论会在重庆大学召开[J]. Chin. J. Semicond., 1987, 8(4): 449..Export: BibTex EndNote

黄开源. 第二届全国多值逻辑学术讨论会在重庆大学召开[J]. Chin. J. Semicond., 1987, 8(4): 449...

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