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Volume 24, Issue 3, Mar 2003
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CONTENTS
非直角互连——布线技术发展的新趋势
洪先龙, 朱祺, 经彤, 王垠, 杨旸, 蔡懿慈
Chin. J. Semicond.  2003, 24(3): 225-233
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氦离子注入形成980nm脊型波导激光器腔面非注入区的研究(英文)
刘斌, 张敬明, 马骁宇, 肖建伟
Chin. J. Semicond.  2003, 24(3): 234-237
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热载流子应力下超薄栅p MOS器件氧化层陷阱电荷的表征(英文)
杨国勇, 王金延, 霍宗亮, 毛凌锋, 谭长华, 许铭真
Chin. J. Semicond.  2003, 24(3): 238-244
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16信道0.35μmCMOS/VCSEL光发射模块(英文)
陈弘达, 申荣铉, 毛陆虹, 唐君, 梁琨, 杜云, 黄永箴, 吴荣汉, 冯军, 柯锡明, 刘欢艳, 王志功
Chin. J. Semicond.  2003, 24(3): 245-249
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用于CMOS图像传感器的双极结型光栅晶体管特性的数值模拟与分析(英文)
金湘亮, 陈杰, 仇玉林
Chin. J. Semicond.  2003, 24(3): 250-254
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与标准CMOS完全兼容的硅基LED器件模拟(英文)
孙增辉, 陈弘达, 毛陆虹, 崔增文, 高鹏
Chin. J. Semicond.  2003, 24(3): 255-259
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对电源及温度不敏感的电流可调的CMOS电荷泵电路的设计(英文)
赵晖, 徐栋麟, 潘莎, 杨柯, 任俊彦, 章倩苓
Chin. J. Semicond.  2003, 24(3): 260-265
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基于标准单元布图模式的电源线/地线网络设计、优化和验证集成工具(英文)
傅静静, 武晓海, 洪先龙, 蔡懿慈
Chin. J. Semicond.  2003, 24(3): 266-273
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有机电致发光器件发光层中电场与载流子浓度分布的数值研究
彭应全, 张福甲, 李海蓉, 宋长安
Chin. J. Semicond.  2003, 24(3): 274-278
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Pt/n-GaN肖特基接触的退火行为
张泽洪, 孙元平, 赵德刚, 段俐宏, 王俊, 沈晓明, 冯淦, 冯志宏, 杨辉
Chin. J. Semicond.  2003, 24(3): 279-283
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在柔性衬底上制备的非晶硅薄膜力学性能研究
丁天怀, 王鹏, 徐峰
Chin. J. Semicond.  2003, 24(3): 284-289
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用二次离子质谱和扩展电阻探针技术测量硅中注入硼的深度分布及扩展电阻探针技术分辨率的估算
杨恒青, 颜佳骅, 陈俭, 曹永明
Chin. J. Semicond.  2003, 24(3): 290-297
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双电测组合法测试半导体电阻率的研究
宿昌厚, 鲁效明
Chin. J. Semicond.  2003, 24(3): 298-306
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背面Ar~+轰击对n-MOSFET低频噪声的影响
黄美浅, 李观启, 李斌, 曾绍鸿
Chin. J. Semicond.  2003, 24(3): 307-311
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SOI结构P型SiGe沟道混合模式晶体管器件模型研究
夏克军, 李树荣, 王纯, 郭维廉, 郑云光, 陈培毅, 钱佩信
Chin. J. Semicond.  2003, 24(3): 312-317
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低开启电压的InGaP/GaAsSb/GaAs双异质结晶体管
郑丽萍, 严北平, 孙海锋, 刘新宇, 和致经, 吴德馨
Chin. J. Semicond.  2003, 24(3): 318-321
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一种适用于2 4GHz ISM射频波段的全集成CMOS压控振荡器
王海永, 林敏, 李永明, 陈弘毅
Chin. J. Semicond.  2003, 24(3): 322-326
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半导体器件建模与优化系统
谢晓锋, 鲁勇, 李钊, 阮骏, 姚依, 张文俊, 杨之廉
Chin. J. Semicond.  2003, 24(3): 327-331
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压阻加速度计的Au-Si共晶键合
王翔, 张大成, 李婷, 王玮, 阮勇, 李修函, 王小保, 杜先锋
Chin. J. Semicond.  2003, 24(3): 332-336
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PAPERS
Effect of Surface-Covered Annealing on the Optical Properties of ZnO Films Grown by MOCVD
Wang Li, Pu Yong, Fang Wenqing, Mo Chunlan, Xiong Chuanbing, Jiang Fengyi
Chin. J. Semicond.  2003, 24(3): 409-412
Abstract PDF

ZnO films grown by metal organic chemical vapor deposition at atmospheric pressure are annealed at 850℃,with the film surfaces exposed to air or covered by a sapphire wafer.The optical properties of the as-grown and the annealed samples are studied by photoluminescence (PL) spectroscopy.It is found that the air-exposure annealing effectively removes the hydrogen impurities from the ZnO films but greatly increases the deep-level emission.In the surface-covered annealed sample,an elimination of the hydrogen impurities is also observed,and the deep-level emission disappears completely.The free exciton emission is significantly enhanced in the ZnO film after surface-covered annealing.

ZnO films grown by metal organic chemical vapor deposition at atmospheric pressure are annealed at 850℃,with the film surfaces exposed to air or covered by a sapphire wafer.The optical properties of the as-grown and the annealed samples are studied by photoluminescence (PL) spectroscopy.It is found that the air-exposure annealing effectively removes the hydrogen impurities from the ZnO films but greatly increases the deep-level emission.In the surface-covered annealed sample,an elimination of the hydrogen impurities is also observed,and the deep-level emission disappears completely.The free exciton emission is significantly enhanced in the ZnO film after surface-covered annealing.