Archive

Volume 28, Issue 9, Sep 2007

• LETTERS

  Ti/4H-SiC Schottky Barrier Diodes with Field Plate and B+ Implantation Edge Termination Technology

  Chen Gang, Li Zheyang, Bai Song, Ren Chunjiang

  Chin. J. Semicond.  2007, 28(9): 1333
  

  Driving Circuit for AMOLED with Fault Tolerance

  Li Dayong, Liu Ming, Wei Wang

  Chin. J. Semicond.  2007, 28(9): 1337
  

  A High Speed,12-Channel Parallel,Monolithic IntegratedCMOS OEIC Receiver

  Zhu Haobo, Mao Luhong, Yu Changliang, Chen Hongda, Tang Jun

  Chin. J. Semicond.  2007, 28(9): 1341
  

  A Novel Power Supply Solution of a Passive RFID Transponder

  Jia Hailong, Ni Weining, Shi Yin, Dai F F

  Chin. J. Semicond.  2007, 28(9): 1346
  

• PAPERS

  Subsurface Damage in the Monocrystal Silicon Grinding on Atomic Scale

  Guo Xiaoguang, Guo Dongming, Kang Renke, Jin Zhuji

  Chin. J. Semicond.  2007, 28(9): 1353
  

  A Novel Fully-Depleted Dual-Gate MOSFET

  Zhang Guohe, Shao Zhibiao, Han Bin, Liu Derui

  Chin. J. Semicond.  2007, 28(9): 1359
  

  CMOS Quadrature Modulator and Up-Conversion Mixer for802.11a Wireless LAN Systems

  Li Wenyuan, Wang Zhigong, Mao Yinwei

  Chin. J. Semicond.  2007, 28(9): 1364
  

  Mismatch Calibration Techniques in Successive Approximation Analog-to-Digital Converters

  Wang Pei, Long Shanli, Wu Jianhui

  Chin. J. Semicond.  2007, 28(9): 1369
  

  Combined Novel Gate Level Model and Critical Primary Input Sharing for Genetic Algorithm Based Maximum Power Supply Noise Estimation

  Tian Zhixin, Liu Yongpan, Yang Huazhong

  Chin. J. Semicond.  2007, 28(9): 1375
  

  Interband Optical Transitions in Semiconducting Iron Disilicide β-FeSi2

  Yan Wanjun, Xie Quan, Zhang Jinmin, Xiao Qingquan, Liang Yan, Zeng Wuxian

  Chin. J. Semicond.  2007, 28(9): 1381
  

  Photoluminescence Properties of Er-Doped HfO2 Films

  Xia Yan, Wang Junzhuan, Shi Zhuoqiong, Shi Yi, Pu Lin, Zhang Rong, Zheng Youdou, Tao Zhensheng, Lu Fang

  Chin. J. Semicond.  2007, 28(9): 1388
  

  Theoretical Calculation of Conversion Efficiency of InGaN Solar Cells

  Wen Bo, Zhou Jianjun, Jiang Ruolian, Xie Zili, Chen Dunjun, Ji Xiaoli, Han Ping, Zhang Rong, Zheng Youdou

  Chin. J. Semicond.  2007, 28(9): 1392
  

  Conductivity and Conducting Mechanism of Polypyrrole via Chemical Oxidative Polymerization

  Ren Li, Zhang Xuefeng, Wang Lixin, Zhang Fuqiang

  Chin. J. Semicond.  2007, 28(9): 1396
  

  Influence of Ag Layer Thickness on the Properties of ZnO/Ag/ZnO Films

  Li Jun, Yan Jinliang, Sun Xueqing, Li Kewei, Yang Chunxiu

  Chin. J. Semicond.  2007, 28(9): 1402
  

  Bi2O3-ZnO-Nb2O5 Film Fabricated by Sol-Gel Technique and C-V Characteristic of GaN MIS Structure

  Shu Bin, Zhang Heming, Wang Qing, Huang Dapeng, Xuan Rongxi

  Chin. J. Semicond.  2007, 28(9): 1406
  

  Growth of AlGaAs on GaAs (110) Surface by Molecular Beam Epitaxy

  Liu Linsheng, Wang Wenxin, Liu Su, Zhao Hongming, Liu Baoli, Jiang Zhongwei, Gao Hanchao, Wang Jia, Huang Qing’an, Chen Hong, Zhou Junming

  Chin. J. Semicond.  2007, 28(9): 1411
  

  Fabrication of a Novel SOI Material with Non-Planar Buried Oxide Layer

  Guo Yufeng, Li Zhaoji, Zhang Bo, Liu Yong

  Chin. J. Semicond.  2007, 28(9): 1415
  

  Recess-Gate AlGaN/GaN HFET

  Zhang Zhiguo, Feng Zhen, Yang Mengli, Feng Zhihong, Mo Jianghui, Cai Shujun, Yang Kewu

  Chin. J. Semicond.  2007, 28(9): 1420
  

  Monolithic Integration of 0.8μm Gate-Length GaAs-Based InGaP/AlGaAs/InGaAs Enhancement- and Depletion-Mode PHEMTs

  Xu Jingbo, Zhang Haiying, Yin Junjian, Liu Liang, Li Xiao, Ye Tianchun, Li Ming

  Chin. J. Semicond.  2007, 28(9): 1424
  

  Breakdown Characteristic of Multiregion Double RESURF LDMOS with High Voltage Interconnection

  Qiao Ming, Zhou Xianda, Duan Mingwei, Fang Jian, Zhang Bo, Li Zhaoji

  Chin. J. Semicond.  2007, 28(9): 1428
  

  Analysis of Early Voltage in 4H-SiC BJTs

  Han Ru, Li Cong, Yang Yintang, Jia Hujun

  Chin. J. Semicond.  2007, 28(9): 1433
  

  A 22-Element Small-Signal Model of GaN HEMT Devices

  Liu Dan, Chen Xiaojuan, Liu Xinyu, Wu Dexin

  Chin. J. Semicond.  2007, 28(9): 1438
  

  RTS Amplitude of 90nm MOS Devices in Sub-Threshold Region

  Bao Li, Zhuang Yiqi, Ma Xiaohua, Bao Junlin

  Chin. J. Semicond.  2007, 28(9): 1443
  

  RF-CMOS Modeling:An Improved Accumulation-Mode MOS Varactor Model

  Liu Jun, Sun Lingling, Wen Jincai

  Chin. J. Semicond.  2007, 28(9): 1448
  

  A Tunable Micromechanical Capacitor Driven by Electrostatic Force

  Fang Dongming, Fu Shi, Zhou Yong, Zhao Xiaolin

  Chin. J. Semicond.  2007, 28(9): 1454
  

  Analytical Solutions for Thermal Stresses in the Core of Silica-on-Silicon Waveguide

  Huang Huamao, Huang Dexiu, Liu Wen

  Chin. J. Semicond.  2007, 28(9): 1459
  

  Simulation of SU-8 Photoresist Profile in Deep UV Lithography

  Feng Ming, Huang Qing’an, Li Weihua, Zhou Zaifa, Zhu Zhen

  Chin. J. Semicond.  2007, 28(9): 1465
  

  CMOS UHF Rectifier

  Zhou Shenghua, Wu Nanjian

  Chin. J. Semicond.  2007, 28(9): 1471
  

  Novel Driver for Class-D Audio Power Amplifier

  Ye Qiang, Lai Xinquan, Dai Guoding, Wang Hui, Xu Luping

  Chin. J. Semicond.  2007, 28(9): 1477
  

  Design,Fabrication,and Characterization of a High-Performance Monolithic Triaxial Piezoresistive High-gAccelerometer

  Dong Peitao, Li Xinxin, Zhang Kun, Wu Xuezhong, Li Shengyi, Feng Songlin

  Chin. J. Semicond.  2007, 28(9): 1482
  

  A CMOS Sampling Switch for 14bit 50MHz Pipelined A/D Converter

  Hu Xiaoyu, Zhou Yumei

  Chin. J. Semicond.  2007, 28(9): 1488
  

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