DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure
Chin. J. Semicond. 2007, 28(2): 145
Ohmic Contact Properties of Multi-Metal Films on n-Type 4H-SiC
Chin. J. Semicond. 2007, 28(2): 149
InP/InGaAs Heterojunction Bipolar Transistor with Base μ-Bridge and Emitter Air-Bridge
Chin. J. Semicond. 2007, 28(2): 154
SOICMOS Integrated Circuit of Laser Range Finding Working at High Temperatures
Chin. J. Semicond. 2007, 28(2): 159
New Lateral Super Junction MOSFETs with n+-Floating Layeron High-Resistance Substrate
Chin. J. Semicond. 2007, 28(2): 166
Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts
Chin. J. Semicond. 2007, 28(2): 171
A 155Mbps 0.5μm CMOS Limiting Amplifier
Chin. J. Semicond. 2007, 28(2): 176
A Fully Integrated CMOS Readout Circuit for Particle Detectors
Chin. J. Semicond. 2007, 28(2): 182
Detailed Routing Algorithm with Optical Proximity Effects Constraint
Chin. J. Semicond. 2007, 28(2): 189
Luminescence and Recombination Centers in ZnO/Si Films
Chin. J. Semicond. 2007, 28(2): 196
Effect of Pretreatment on Thermal Donors in Neutron-Irradiated Czochralski Silicon
Chin. J. Semicond. 2007, 28(2): 200
Physical Vapor Transport Growth and Characterization of Large Bulk AlN Crystal
Chin. J. Semicond. 2007, 28(2): 204
Fabrication of 1nm/s High Deposition Microcrystalline Silicon and Its Application in Solar Cells
Chin. J. Semicond. 2007, 28(2): 209
Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals
Chin. J. Semicond. 2007, 28(2): 213
Pressure-Free Localized Laser Bonding for Silicon and Glass
Chin. J. Semicond. 2007, 28(2): 217
Duration of Startup of GaAs Wet Etching Measured by Infrared-Image of Linear Liquid Film
Chin. J. Semicond. 2007, 28(2): 222
Model of Non-Normal Process Capability Indices to Semiconductor Quality Control
Chin. J. Semicond. 2007, 28(2): 227
A Novel Double RESURF TG-LDMOS Device Structure
Chin. J. Semicond. 2007, 28(2): 232
Regular Perturbation Method for Studying the Subthreshold Characteristics of Nano-Scaled MOSFETs
Chin. J. Semicond. 2007, 28(2): 237
Total Ionizing Dose Effects of Deep Submicron nMOSFET Devices
Chin. J. Semicond. 2007, 28(2): 241
RF-CMOS Modeling:Parasitic Analysis for MOST On-Wafer Test Structure
Chin. J. Semicond. 2007, 28(2): 246
Self-Seeding of DFB Laser to Improve the Frequency Response
Chin. J. Semicond. 2007, 28(2): 254
Injection Locked Erbium-Doped Fiber Ring Laser and Its Wavelength Tuning
Chin. J. Semicond. 2007, 28(2): 258
Fabrication and Characteristics of Nano-Aperture Vertical-Cavity Surface-Emitting Laser
Chin. J. Semicond. 2007, 28(2): 265
Modeling,Fabrication,and Characterization of a Novel Optically Driven Deformable Mirror
Chin. J. Semicond. 2007, 28(2): 269
Coupling Theory and Simulation of a High Speed OpticalReceiver Module
Chin. J. Semicond. 2007, 28(2): 275
Deformation Simulation on the Beam of InP-BasedMOEMS Tunable Devices
Chin. J. Semicond. 2007, 28(2): 280
Separate Absorption and Multiplication 4H-SiC UltravioletAvalanche Photodetector
Chin. J. Semicond. 2007, 28(2): 284
A Novel Oscillator Based on RTD/MOSFET
Chin. J. Semicond. 2007, 28(2): 289
An 80dB Dynamic Range Σ-Δ Modulator for a GSM System
Chin. J. Semicond. 2007, 28(2): 294
Fabrication of Monolithic Silicon Multi-Sensor on SOI Wafer
Chin. J. Semicond. 2007, 28(2): 302
Study on the Material Removal Mechanism in Chemical Mechanical Polishing at the Molecular Scale
Chin. J. Semicond. 2007, 28(2): 308